Electrical Transport Characteristics of Pd/V/N-InP Schottky Diode From I-V-T and C-V-T Measurements
The temperature dependence of current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/V contacts on undoped n-type InP Schottky barrier diodes (SBDs) have been systematically investigated in the temperature range of 200-400 K. The transition metal palladium (Pd) is used as a se...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Sumy State University
2011-01-01
|
| Series: | Журнал нано- та електронної фізики |
| Subjects: | |
| Online Access: | http://jnep.sumdu.edu.ua/download/numbers/2011/1,%20Part%205/articles/jnep_2011_V3_N1(Part5)_1048-1055.pdf |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|