Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond
Abstract The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector....
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley-VCH
2025-05-01
|
| Series: | Advanced Electronic Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/aelm.202400665 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849314949694750720 |
|---|---|
| author | Sanghyun Ban Jangseop Lee Yoori Seo Wootae Lee Taehoon Kim Hyunsang Hwang |
| author_facet | Sanghyun Ban Jangseop Lee Yoori Seo Wootae Lee Taehoon Kim Hyunsang Hwang |
| author_sort | Sanghyun Ban |
| collection | DOAJ |
| description | Abstract The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide‐based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post‐treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector‐only memory (SOM) is examined, which offers better scalability and performance than the existing one‐memory and one‐selector structure, which combines an OTS with phase‐change memory. Moreover, a cost‐effective 3D vertical X‐point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here. |
| format | Article |
| id | doaj-art-ec8f2d965d6a463dae56049c83cd740c |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-ec8f2d965d6a463dae56049c83cd740c2025-08-20T03:52:16ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-05-01116n/an/a10.1002/aelm.202400665Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and BeyondSanghyun Ban0Jangseop Lee1Yoori Seo2Wootae Lee3Taehoon Kim4Hyunsang Hwang5Center for Single Atom‐Based Semiconductor Device Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 South KoreaCenter for Single Atom‐Based Semiconductor Device Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 South KoreaCenter for Single Atom‐Based Semiconductor Device Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 South KoreaSK hynix Inc. Icheon‐si Gyeonggi‐do 467‐701 South KoreaSK hynix Inc. Icheon‐si Gyeonggi‐do 467‐701 South KoreaCenter for Single Atom‐Based Semiconductor Device Department of Material Science and Engineering Pohang University of Science and Technology (POSTECH) Pohang 790‐784 South KoreaAbstract The explosive increase in the demand for data driven by advancements in artificial intelligence technology and rapid expansion of data centers necessitates storage class memory (SCM) capable of alleviating data traffic and workload issues. The success of SCM depends heavily on the selector. The ovonic threshold switch (OTS), a chalcogenide‐based amorphous thin film, has garnered increasing attention as a selector owing to its suitable characteristics. Here, OTS devices based on various chalcogens (tellurium, selenium, and sulfur) are reviewed, and how the selection of a chalcogen should be dictated by the specific requirements of the application is highlighted, because the OTS characteristics vary significantly depending on the choice. Additionally, OTS characteristic engineering from multiple perspectives, including material engineering via elemental doping, electrode engineering, physical property engineering via post‐treatment, and structural/interface engineering using multiple layers is reviewed. Finally, selector‐only memory (SOM) is examined, which offers better scalability and performance than the existing one‐memory and one‐selector structure, which combines an OTS with phase‐change memory. Moreover, a cost‐effective 3D vertical X‐point memory is also discussed, emphasizing that its ultimate implementation should be achieved using an SOM. Thus, insights and guidelines for OTS material design, stack engineering, and cell parameter design are provided here.https://doi.org/10.1002/aelm.202400665crosspoint arrayovonic threshold switchselectorselector‐only memoryvertical crosspoint memory |
| spellingShingle | Sanghyun Ban Jangseop Lee Yoori Seo Wootae Lee Taehoon Kim Hyunsang Hwang Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond Advanced Electronic Materials crosspoint array ovonic threshold switch selector selector‐only memory vertical crosspoint memory |
| title | Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond |
| title_full | Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond |
| title_fullStr | Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond |
| title_full_unstemmed | Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond |
| title_short | Advances in Ovonic Threshold Switch Selector Technologies for Storage Class Memory: From Fundamentals to Development and Beyond |
| title_sort | advances in ovonic threshold switch selector technologies for storage class memory from fundamentals to development and beyond |
| topic | crosspoint array ovonic threshold switch selector selector‐only memory vertical crosspoint memory |
| url | https://doi.org/10.1002/aelm.202400665 |
| work_keys_str_mv | AT sanghyunban advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond AT jangseoplee advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond AT yooriseo advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond AT wootaelee advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond AT taehoonkim advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond AT hyunsanghwang advancesinovonicthresholdswitchselectortechnologiesforstorageclassmemoryfromfundamentalstodevelopmentandbeyond |