Development of Broadband Low Actuation Voltage RF MEM Switches
Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semico...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/08827510211282 |
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| author | S. C. Shen D. Becher Z. Fan D. Caruth Milton Feng |
| author_facet | S. C. Shen D. Becher Z. Fan D. Caruth Milton Feng |
| author_sort | S. C. Shen |
| collection | DOAJ |
| description | Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using
cantilever and hinged topologies. We demonstrated promising sub-10 volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of
broadband RF, microwave, and millimeter-wave circuits. |
| format | Article |
| id | doaj-art-ec8d739e96c64447a09cbf3f7315650f |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-ec8d739e96c64447a09cbf3f7315650f2025-08-20T02:21:49ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-012519711110.1080/08827510211282Development of Broadband Low Actuation Voltage RF MEM SwitchesS. C. Shen0D. Becher1Z. Fan2D. Caruth3Milton Feng4Center for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, IL 61801-2355, USACenter for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, IL 61801-2355, USACenter for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, IL 61801-2355, USACenter for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, IL 61801-2355, USACenter for Compound Semiconductor Microelectronics, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 208 N. Wright St., Urbana, IL 61801-2355, USALow insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promising sub-10 volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.http://dx.doi.org/10.1080/08827510211282 |
| spellingShingle | S. C. Shen D. Becher Z. Fan D. Caruth Milton Feng Development of Broadband Low Actuation Voltage RF MEM Switches Active and Passive Electronic Components |
| title | Development of Broadband Low Actuation Voltage RF MEM Switches |
| title_full | Development of Broadband Low Actuation Voltage RF MEM Switches |
| title_fullStr | Development of Broadband Low Actuation Voltage RF MEM Switches |
| title_full_unstemmed | Development of Broadband Low Actuation Voltage RF MEM Switches |
| title_short | Development of Broadband Low Actuation Voltage RF MEM Switches |
| title_sort | development of broadband low actuation voltage rf mem switches |
| url | http://dx.doi.org/10.1080/08827510211282 |
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