A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs
This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical character...
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| Format: | Article |
| Language: | English |
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IEEE
2024-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/10438721/ |
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| author | Fanzhao Meng Yi Li Jun Li Jie Liang Jianhua Zhang |
| author_facet | Fanzhao Meng Yi Li Jun Li Jie Liang Jianhua Zhang |
| author_sort | Fanzhao Meng |
| collection | DOAJ |
| description | This paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical characteristics suitable for accomplishing an OPAMP. The circuit consists of 19 TFTs with measured phase margin (PM) and unity-gain frequency (UGF) of 35.8° and 200 kHz, respectively. The DC power consumption (PDC) is 0.68 mW. Notably, it exhibits a high voltage gain (Av) of 32.67 dB and bandwidth (BW) of 15 kHz with 15 V DC supply voltage. Scarcely any work was reported with such a high gain while having a sufficient BW. The OPAMP demonstrates excellent performance among all a-IGZO literature and provides substantial support for the future development of TFT-based integrated circuits (ICs). |
| format | Article |
| id | doaj-art-ec66fa3d8b8c4dc88f9d973f9034bcef |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2024-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-ec66fa3d8b8c4dc88f9d973f9034bcef2025-01-29T00:00:10ZengIEEEIEEE Journal of the Electron Devices Society2168-67342024-01-011215916410.1109/JEDS.2024.336655410438721A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTsFanzhao Meng0https://orcid.org/0000-0002-3666-922XYi Li1Jun Li2https://orcid.org/0000-0003-0124-1757Jie Liang3https://orcid.org/0000-0002-0595-8598Jianhua Zhang4https://orcid.org/0000-0001-8061-1861School of Microelectronics, Shanghai University, Shanghai, ChinaSchool of Microelectronics, Shanghai University, Shanghai, ChinaSchool of Microelectronics, Shanghai University, Shanghai, ChinaSchool of Microelectronics, Shanghai University, Shanghai, ChinaSchool of Microelectronics, Shanghai University, Shanghai, ChinaThis paper reports a performance optimized operational amplifier (OPAMP) using transconductance enhancement topology based on the amorphous indium- gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The performance of TFTs is enhanced by N2O plasma treatment that presents electrical characteristics suitable for accomplishing an OPAMP. The circuit consists of 19 TFTs with measured phase margin (PM) and unity-gain frequency (UGF) of 35.8° and 200 kHz, respectively. The DC power consumption (PDC) is 0.68 mW. Notably, it exhibits a high voltage gain (Av) of 32.67 dB and bandwidth (BW) of 15 kHz with 15 V DC supply voltage. Scarcely any work was reported with such a high gain while having a sufficient BW. The OPAMP demonstrates excellent performance among all a-IGZO literature and provides substantial support for the future development of TFT-based integrated circuits (ICs).https://ieeexplore.ieee.org/document/10438721/Amorphous InGaZnO (a-IGZO)thin film transistors (TFTs)N₂O plasma treatmentoperational amplifier (OPAMP)positive feedbacktransconductance enhancement topology |
| spellingShingle | Fanzhao Meng Yi Li Jun Li Jie Liang Jianhua Zhang A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs IEEE Journal of the Electron Devices Society Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) N₂O plasma treatment operational amplifier (OPAMP) positive feedback transconductance enhancement topology |
| title | A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs |
| title_full | A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs |
| title_fullStr | A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs |
| title_full_unstemmed | A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs |
| title_short | A Performance Optimized Operational Amplifier Using Transconductance Enhancement Topology Based on a-IGZO TFTs |
| title_sort | performance optimized operational amplifier using transconductance enhancement topology based on a igzo tfts |
| topic | Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) N₂O plasma treatment operational amplifier (OPAMP) positive feedback transconductance enhancement topology |
| url | https://ieeexplore.ieee.org/document/10438721/ |
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