Yunik, A. D., & Shydlouski, A. H. Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas. Educational institution «Belarusian State University of Informatics and Radioelectronics».
Chicago Style (17th ed.) CitationYunik, A. D., and A. H. Shydlouski. Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of P-GaN and AlGaN Layers of the P-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas. Educational institution «Belarusian State University of Informatics and Radioelectronics».
MLA (9th ed.) CitationYunik, A. D., and A. H. Shydlouski. Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of P-GaN and AlGaN Layers of the P-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas. Educational institution «Belarusian State University of Informatics and Radioelectronics».