THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate
Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed. Many particle Monte Carlo method with the solving of the Poisson equat...
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| Format: | Article |
| Language: | Russian |
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Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
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| Online Access: | https://doklady.bsuir.by/jour/article/view/713 |
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| author | V. N. Mishchenka |
| author_facet | V. N. Mishchenka |
| author_sort | V. N. Mishchenka |
| collection | DOAJ |
| description | Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed. Many particle Monte Carlo method with the solving of the Poisson equation are used for simulation of the three dimension structure with submicron length of the gate. Investigation of the gallium arsenide device provided the new results which connected with the influence of the geometrical size of the structure and features of gate construction to the output static characteristics. New modeling method of contact regions in device is presented for gallium arsenide transistors. |
| format | Article |
| id | doaj-art-ebdedfc895844628afcbb2d05d80a9a3 |
| institution | Kabale University |
| issn | 1729-7648 |
| language | Russian |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj-art-ebdedfc895844628afcbb2d05d80a9a32025-08-20T03:43:55ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-0106113116712THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gateV. N. Mishchenka0Белорусский государственный университет информатики и радиоэлектроникиModeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed. Many particle Monte Carlo method with the solving of the Poisson equation are used for simulation of the three dimension structure with submicron length of the gate. Investigation of the gallium arsenide device provided the new results which connected with the influence of the geometrical size of the structure and features of gate construction to the output static characteristics. New modeling method of contact regions in device is presented for gallium arsenide transistors.https://doklady.bsuir.by/jour/article/view/713transistorultra high frequency and extreme high frequency rangesgallium arsenidemonte carlo method |
| spellingShingle | V. N. Mishchenka THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki transistor ultra high frequency and extreme high frequency ranges gallium arsenide monte carlo method |
| title | THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate |
| title_full | THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate |
| title_fullStr | THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate |
| title_full_unstemmed | THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate |
| title_short | THREE DIMENsION MODELLING OF OUTPUT CHARACTERISTICS OF GALLIUM ARSENIDE TRANSISTORS with submicron length of the gate |
| title_sort | three dimension modelling of output characteristics of gallium arsenide transistors with submicron length of the gate |
| topic | transistor ultra high frequency and extreme high frequency ranges gallium arsenide monte carlo method |
| url | https://doklady.bsuir.by/jour/article/view/713 |
| work_keys_str_mv | AT vnmishchenka threedimensionmodellingofoutputcharacteristicsofgalliumarsenidetransistorswithsubmicronlengthofthegate |