High Frequency Response of Volatile Memristors
Abstract In this theoretical study, the high‐frequency response of the electrothermal NbO2‐Mott threshold switch is focused, a real‐world electronic device, which has been proved to be relevant in several applications and is classified as a volatile memristor. Memristors of this kind, have been show...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2024-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400172 |
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| author | Ioannis Messaris Alon Ascoli Ahmet S. Demirkol Vasileios Ntinas Dimitrios Prousalis Ronald Tetzlaff |
| author_facet | Ioannis Messaris Alon Ascoli Ahmet S. Demirkol Vasileios Ntinas Dimitrios Prousalis Ronald Tetzlaff |
| author_sort | Ioannis Messaris |
| collection | DOAJ |
| description | Abstract In this theoretical study, the high‐frequency response of the electrothermal NbO2‐Mott threshold switch is focused, a real‐world electronic device, which has been proved to be relevant in several applications and is classified as a volatile memristor. Memristors of this kind, have been shown to exhibit distinctive non‐linear behaviors crucial for cutting‐edge neuromorphic circuits. In accordance with well‐established models for these devices, their resistances depend on their body temperatures, which evolve over time following Newton's Law of Cooling. Here, it is demonstrated that HP's NbO2‐Mott memristor can manifest up to three distinct steady‐state oscillatory behaviors under a suitable high‐frequency periodic voltage input, showcasing increased versatility despite its volatile nature. Additionally, when subjected to a high‐frequency periodic voltage signal, the device body temperature oscillates with a negligible peak‐to‐peak amplitude. Since the temperature remains almost constant over an input cycle, the devices under study behave as linear resistors during each input cycle. Based on these insights, this paper presents analytical equations characterizing the response of the NbO2‐Mott memristor to high‐frequency voltage inputs, demarcating regions in the state space where distinct initial conditions lead to various asymptotic oscillatory behaviors. Importantly, the mathematical methods introduced in this manuscript are applicable to any volatile electrothermal resistive switch. Additionally, this work presents analytical equations that accurately reproduce the temperature time‐waveform of the studied device during both its transient and steady‐state phases when subjected to a zero‐mean sinusoidal voltage input oscillating in the high‐frequency limit. This analytical approach not only increases the comprehension of volatile electrothermal memristors but also provides a theoretical framework to harness the enhanced dynamical capabilities of real‐world volatile memristors in practical applications. |
| format | Article |
| id | doaj-art-ebac4b06781d4d23b05662963808b25a |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-ebac4b06781d4d23b05662963808b25a2025-01-09T11:51:13ZengWiley-VCHAdvanced Electronic Materials2199-160X2024-12-011012n/an/a10.1002/aelm.202400172High Frequency Response of Volatile MemristorsIoannis Messaris0Alon Ascoli1Ahmet S. Demirkol2Vasileios Ntinas3Dimitrios Prousalis4Ronald Tetzlaff5Faculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden 01069 Dresden GermanyPolitecnico di Torino Corso Castelfidardo 39 19032 Torino ItalyFaculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden 01069 Dresden GermanyFaculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden 01069 Dresden GermanyFaculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden 01069 Dresden GermanyFaculty of Electrical and Computer Engineering Institute of Circuits and Systems Technische Universität Dresden 01069 Dresden GermanyAbstract In this theoretical study, the high‐frequency response of the electrothermal NbO2‐Mott threshold switch is focused, a real‐world electronic device, which has been proved to be relevant in several applications and is classified as a volatile memristor. Memristors of this kind, have been shown to exhibit distinctive non‐linear behaviors crucial for cutting‐edge neuromorphic circuits. In accordance with well‐established models for these devices, their resistances depend on their body temperatures, which evolve over time following Newton's Law of Cooling. Here, it is demonstrated that HP's NbO2‐Mott memristor can manifest up to three distinct steady‐state oscillatory behaviors under a suitable high‐frequency periodic voltage input, showcasing increased versatility despite its volatile nature. Additionally, when subjected to a high‐frequency periodic voltage signal, the device body temperature oscillates with a negligible peak‐to‐peak amplitude. Since the temperature remains almost constant over an input cycle, the devices under study behave as linear resistors during each input cycle. Based on these insights, this paper presents analytical equations characterizing the response of the NbO2‐Mott memristor to high‐frequency voltage inputs, demarcating regions in the state space where distinct initial conditions lead to various asymptotic oscillatory behaviors. Importantly, the mathematical methods introduced in this manuscript are applicable to any volatile electrothermal resistive switch. Additionally, this work presents analytical equations that accurately reproduce the temperature time‐waveform of the studied device during both its transient and steady‐state phases when subjected to a zero‐mean sinusoidal voltage input oscillating in the high‐frequency limit. This analytical approach not only increases the comprehension of volatile electrothermal memristors but also provides a theoretical framework to harness the enhanced dynamical capabilities of real‐world volatile memristors in practical applications.https://doi.org/10.1002/aelm.202400172AC inputsanalytical modelhigh frequencymulti‐stabilitysteady‐state responsetransient response |
| spellingShingle | Ioannis Messaris Alon Ascoli Ahmet S. Demirkol Vasileios Ntinas Dimitrios Prousalis Ronald Tetzlaff High Frequency Response of Volatile Memristors Advanced Electronic Materials AC inputs analytical model high frequency multi‐stability steady‐state response transient response |
| title | High Frequency Response of Volatile Memristors |
| title_full | High Frequency Response of Volatile Memristors |
| title_fullStr | High Frequency Response of Volatile Memristors |
| title_full_unstemmed | High Frequency Response of Volatile Memristors |
| title_short | High Frequency Response of Volatile Memristors |
| title_sort | high frequency response of volatile memristors |
| topic | AC inputs analytical model high frequency multi‐stability steady‐state response transient response |
| url | https://doi.org/10.1002/aelm.202400172 |
| work_keys_str_mv | AT ioannismessaris highfrequencyresponseofvolatilememristors AT alonascoli highfrequencyresponseofvolatilememristors AT ahmetsdemirkol highfrequencyresponseofvolatilememristors AT vasileiosntinas highfrequencyresponseofvolatilememristors AT dimitriosprousalis highfrequencyresponseofvolatilememristors AT ronaldtetzlaff highfrequencyresponseofvolatilememristors |