Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes

Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent den...

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Main Authors: Myohwa Ko, Myounghyun Lee, Taehyeon Kim, Wonjoo Jin, Wonsik Jang, Seon Woo Hwang, Haneul Kim, Ja Hun Kwak, Seungho Cho, Kwanyong Seo, Ji-Wook Jang
Format: Article
Language:English
Published: Nature Portfolio 2025-03-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-025-58000-4
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_version_ 1849389951642238976
author Myohwa Ko
Myounghyun Lee
Taehyeon Kim
Wonjoo Jin
Wonsik Jang
Seon Woo Hwang
Haneul Kim
Ja Hun Kwak
Seungho Cho
Kwanyong Seo
Ji-Wook Jang
author_facet Myohwa Ko
Myounghyun Lee
Taehyeon Kim
Wonjoo Jin
Wonsik Jang
Seon Woo Hwang
Haneul Kim
Ja Hun Kwak
Seungho Cho
Kwanyong Seo
Ji-Wook Jang
author_sort Myohwa Ko
collection DOAJ
description Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold.
format Article
id doaj-art-eb46eaa8cfc74798a8957cc13a99b671
institution Kabale University
issn 2041-1723
language English
publishDate 2025-03-01
publisher Nature Portfolio
record_format Article
series Nature Communications
spelling doaj-art-eb46eaa8cfc74798a8957cc13a99b6712025-08-20T03:41:49ZengNature PortfolioNature Communications2041-17232025-03-0116111010.1038/s41467-025-58000-4Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodesMyohwa Ko0Myounghyun Lee1Taehyeon Kim2Wonjoo Jin3Wonsik Jang4Seon Woo Hwang5Haneul Kim6Ja Hun Kwak7Seungho Cho8Kwanyong Seo9Ji-Wook Jang10School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold.https://doi.org/10.1038/s41467-025-58000-4
spellingShingle Myohwa Ko
Myounghyun Lee
Taehyeon Kim
Wonjoo Jin
Wonsik Jang
Seon Woo Hwang
Haneul Kim
Ja Hun Kwak
Seungho Cho
Kwanyong Seo
Ji-Wook Jang
Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
Nature Communications
title Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
title_full Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
title_fullStr Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
title_full_unstemmed Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
title_short Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
title_sort coupling furfural oxidation for bias free hydrogen production using crystalline silicon photoelectrodes
url https://doi.org/10.1038/s41467-025-58000-4
work_keys_str_mv AT myohwako couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT myounghyunlee couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT taehyeonkim couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT wonjoojin couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT wonsikjang couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT seonwoohwang couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT haneulkim couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT jahunkwak couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT seunghocho couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT kwanyongseo couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes
AT jiwookjang couplingfurfuraloxidationforbiasfreehydrogenproductionusingcrystallinesiliconphotoelectrodes