Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent den...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2025-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58000-4 |
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| author | Myohwa Ko Myounghyun Lee Taehyeon Kim Wonjoo Jin Wonsik Jang Seon Woo Hwang Haneul Kim Ja Hun Kwak Seungho Cho Kwanyong Seo Ji-Wook Jang |
| author_facet | Myohwa Ko Myounghyun Lee Taehyeon Kim Wonjoo Jin Wonsik Jang Seon Woo Hwang Haneul Kim Ja Hun Kwak Seungho Cho Kwanyong Seo Ji-Wook Jang |
| author_sort | Myohwa Ko |
| collection | DOAJ |
| description | Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold. |
| format | Article |
| id | doaj-art-eb46eaa8cfc74798a8957cc13a99b671 |
| institution | Kabale University |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-eb46eaa8cfc74798a8957cc13a99b6712025-08-20T03:41:49ZengNature PortfolioNature Communications2041-17232025-03-0116111010.1038/s41467-025-58000-4Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodesMyohwa Ko0Myounghyun Lee1Taehyeon Kim2Wonjoo Jin3Wonsik Jang4Seon Woo Hwang5Haneul Kim6Ja Hun Kwak7Seungho Cho8Kwanyong Seo9Ji-Wook Jang10School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST)Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold.https://doi.org/10.1038/s41467-025-58000-4 |
| spellingShingle | Myohwa Ko Myounghyun Lee Taehyeon Kim Wonjoo Jin Wonsik Jang Seon Woo Hwang Haneul Kim Ja Hun Kwak Seungho Cho Kwanyong Seo Ji-Wook Jang Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes Nature Communications |
| title | Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes |
| title_full | Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes |
| title_fullStr | Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes |
| title_full_unstemmed | Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes |
| title_short | Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes |
| title_sort | coupling furfural oxidation for bias free hydrogen production using crystalline silicon photoelectrodes |
| url | https://doi.org/10.1038/s41467-025-58000-4 |
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