Coupling furfural oxidation for bias-free hydrogen production using crystalline silicon photoelectrodes
Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent den...
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| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2025-03-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-58000-4 |
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| Summary: | Abstract To commercialize the technology of photoelectrochemical hydrogen production, it is essential to surpass the US. Department of Energy target of 0.36 mmol h−1 cm−2 for 1-sun hydrogen production rate. In this study, we utilize crystalline silicon, which can exhibit the highest photocurrent density (43.37 mA cm−2), as the photoelectrode material. However, achieving bias-free water splitting (>1.6 V) remains challenging due to the intrinsic low photovoltage of crystalline silicon (0.6 V). To address this limitation, we replace water oxidation with low-potential furfural oxidation, enabling not only bias-free hydrogen production but also dual hydrogen production at both the cathodic and anodic sides. This approach results in a record 1-sun hydrogen production rate of 1.40 mmol h−1 cm−2, exceeding the Department of Energy target by more than fourfold. |
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| ISSN: | 2041-1723 |