Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction
Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Here...
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| Format: | Article |
| Language: | English |
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Wiley
2025-05-01
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| Series: | Advanced Science |
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| Online Access: | https://doi.org/10.1002/advs.202414353 |
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| author | Ransheng Chen Qiang Li Wannian Fang Qifan Zhang Jiaxing Li Zhihao Zhang Kangkang Liu Feng Yun Yanan Guo Tao Wang Yue Hao |
| author_facet | Ransheng Chen Qiang Li Wannian Fang Qifan Zhang Jiaxing Li Zhihao Zhang Kangkang Liu Feng Yun Yanan Guo Tao Wang Yue Hao |
| author_sort | Ransheng Chen |
| collection | DOAJ |
| description | Abstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Herein, n‐type hBN is obtained by means of doping sulfur into hBN. The structure and the electric properties of S‐doped hBN is studied via density functional theory, indicating that the orbital coupling between S 3p and B 2p orbital introduces shallow donor energy levels. The S atoms in the multilayer structure demonstrate enhanced electron delocalization compared with its mono‐layer counterpart, suggesting that multilayer hBN:S is more inclined to be n‐type conductive than its mono‐layer counterpart. Experimentally, a multilayer hBN:S sample is successfully grown on sapphire substrates, where the S content, up to 1.21%, is obtained. The hBN:S film shows an in‐plane current of 1.6 nA using Ti as ohmic contact and 8.4 nA using Ni as Schottky contact, respectively. The donor level induced by the S atoms is located at 0.349 eV below the CBM. Finally, a vertically‐stacked n‐hBN/p‐hBN (hBN:S/hBN: Mg) structured junction is grown, and demonstrating a promise for being fabricated into a deep‐UV emitter. |
| format | Article |
| id | doaj-art-eb2a6ef5d1cc43a9b21b4da35e95b67c |
| institution | OA Journals |
| issn | 2198-3844 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Wiley |
| record_format | Article |
| series | Advanced Science |
| spelling | doaj-art-eb2a6ef5d1cc43a9b21b4da35e95b67c2025-08-20T02:08:14ZengWileyAdvanced Science2198-38442025-05-011218n/an/a10.1002/advs.202414353Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg HomojunctionRansheng Chen0Qiang Li1Wannian Fang2Qifan Zhang3Jiaxing Li4Zhihao Zhang5Kangkang Liu6Feng Yun7Yanan Guo8Tao Wang9Yue Hao10Key Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaKey Laboratory of Physical Electronics and Devices for Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology Xi'an Jiaotong University Xi'an 710049 ChinaState Key Laboratory of Solid‐State Lighting Institute of Semiconductors and Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 ChinaSchool of Physics and Astronomy Cardiff University Cardiff CF24 3AA UKSchool of Microelectronics Xidian University Xi'an 710126 ChinaAbstract A hexagonal boron nitride (hBN) based p‐n homo‐junction is expected to demonstrate a great potential for being fabricated into an emitter (either light‐emitting diode or laser diode) in the deep‐UV spectral region. However, it remains a great challenge to achieve n‐type conductive hBN. Herein, n‐type hBN is obtained by means of doping sulfur into hBN. The structure and the electric properties of S‐doped hBN is studied via density functional theory, indicating that the orbital coupling between S 3p and B 2p orbital introduces shallow donor energy levels. The S atoms in the multilayer structure demonstrate enhanced electron delocalization compared with its mono‐layer counterpart, suggesting that multilayer hBN:S is more inclined to be n‐type conductive than its mono‐layer counterpart. Experimentally, a multilayer hBN:S sample is successfully grown on sapphire substrates, where the S content, up to 1.21%, is obtained. The hBN:S film shows an in‐plane current of 1.6 nA using Ti as ohmic contact and 8.4 nA using Ni as Schottky contact, respectively. The donor level induced by the S atoms is located at 0.349 eV below the CBM. Finally, a vertically‐stacked n‐hBN/p‐hBN (hBN:S/hBN: Mg) structured junction is grown, and demonstrating a promise for being fabricated into a deep‐UV emitter.https://doi.org/10.1002/advs.202414353DFT calculationshexagonal boron nitridehomojunctionsulfur doping |
| spellingShingle | Ransheng Chen Qiang Li Wannian Fang Qifan Zhang Jiaxing Li Zhihao Zhang Kangkang Liu Feng Yun Yanan Guo Tao Wang Yue Hao Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction Advanced Science DFT calculations hexagonal boron nitride homojunction sulfur doping |
| title | Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction |
| title_full | Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction |
| title_fullStr | Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction |
| title_full_unstemmed | Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction |
| title_short | Deep‐UV Light‐Emitting Based on the hBN:S/hBN: Mg Homojunction |
| title_sort | deep uv light emitting based on the hbn s hbn mg homojunction |
| topic | DFT calculations hexagonal boron nitride homojunction sulfur doping |
| url | https://doi.org/10.1002/advs.202414353 |
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