Boron-doped diamond MOSFETs operating at temperatures up to 400°C
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer is employed as the gate contact metal. As the operating temper...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-12-01
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| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2025.2450513 |
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