Boron-doped diamond MOSFETs operating at temperatures up to 400°C
The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer is employed as the gate contact metal. As the operating temper...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2025-12-01
|
| Series: | Functional Diamond |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1080/26941112.2025.2450513 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1832593508293148672 |
|---|---|
| author | Jiangwei Liu Tokuyuki Teraji Bo Da Yasuo Koide |
| author_facet | Jiangwei Liu Tokuyuki Teraji Bo Da Yasuo Koide |
| author_sort | Jiangwei Liu |
| collection | DOAJ |
| description | The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer is employed as the gate contact metal. As the operating temperature rises from room temperature (RT) to 400°C, the absolute drain current maximum for the B-diamond MOSFET increases from 3.9 μA mm−1 to 177.4 μA mm−1. Conversely, the on-resistance decreases significantly from 1469.8 kΩ mm to 16.5 kΩ mm. The on/off ratio for the MOSFET at RT is 1.9 × 105, which increases to over 5.0 × 106 at temperatures exceeding 100°C. The threshold voltage exhibits a decreasing trend, though it deviates from this trend at 300°C. The subthreshold voltage and extrinsic transconductance maximum show increasing trends from 113 mV dec−1 to 299 mV dec−1 and from 0.9 μS mm−1 to 23.1 μS mm−1, respectively. The interfacial trapped charge density is found to be stable in the range of 8.0 × 1011–2.3 × 1012 eV−1 cm−2. |
| format | Article |
| id | doaj-art-ead8abc16e4c4196ae5d16d843addc36 |
| institution | Kabale University |
| issn | 2694-1120 |
| language | English |
| publishDate | 2025-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Functional Diamond |
| spelling | doaj-art-ead8abc16e4c4196ae5d16d843addc362025-01-20T14:38:00ZengTaylor & Francis GroupFunctional Diamond2694-11202025-12-015110.1080/26941112.2025.24505132450513Boron-doped diamond MOSFETs operating at temperatures up to 400°CJiangwei Liu0Tokuyuki Teraji1Bo Da2Yasuo Koide3Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)Research and Services Division of Materials Data and Integrated System, NIMSResearch Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS)The boron-doped diamond (B-diamond) metal-oxide–semiconductor field–effect transistors (MOSFETs) are fabricated and characterized at operating temperatures up to 400°C. The SiO2 serves as the gate oxide insulator, while the Ti/Pt bilayer is employed as the gate contact metal. As the operating temperature rises from room temperature (RT) to 400°C, the absolute drain current maximum for the B-diamond MOSFET increases from 3.9 μA mm−1 to 177.4 μA mm−1. Conversely, the on-resistance decreases significantly from 1469.8 kΩ mm to 16.5 kΩ mm. The on/off ratio for the MOSFET at RT is 1.9 × 105, which increases to over 5.0 × 106 at temperatures exceeding 100°C. The threshold voltage exhibits a decreasing trend, though it deviates from this trend at 300°C. The subthreshold voltage and extrinsic transconductance maximum show increasing trends from 113 mV dec−1 to 299 mV dec−1 and from 0.9 μS mm−1 to 23.1 μS mm−1, respectively. The interfacial trapped charge density is found to be stable in the range of 8.0 × 1011–2.3 × 1012 eV−1 cm−2.http://dx.doi.org/10.1080/26941112.2025.2450513boron-dopedhigh-temperaturemosfetssingle-crystal diamond |
| spellingShingle | Jiangwei Liu Tokuyuki Teraji Bo Da Yasuo Koide Boron-doped diamond MOSFETs operating at temperatures up to 400°C Functional Diamond boron-doped high-temperature mosfets single-crystal diamond |
| title | Boron-doped diamond MOSFETs operating at temperatures up to 400°C |
| title_full | Boron-doped diamond MOSFETs operating at temperatures up to 400°C |
| title_fullStr | Boron-doped diamond MOSFETs operating at temperatures up to 400°C |
| title_full_unstemmed | Boron-doped diamond MOSFETs operating at temperatures up to 400°C |
| title_short | Boron-doped diamond MOSFETs operating at temperatures up to 400°C |
| title_sort | boron doped diamond mosfets operating at temperatures up to 400°c |
| topic | boron-doped high-temperature mosfets single-crystal diamond |
| url | http://dx.doi.org/10.1080/26941112.2025.2450513 |
| work_keys_str_mv | AT jiangweiliu borondopeddiamondmosfetsoperatingattemperaturesupto400c AT tokuyukiteraji borondopeddiamondmosfetsoperatingattemperaturesupto400c AT boda borondopeddiamondmosfetsoperatingattemperaturesupto400c AT yasuokoide borondopeddiamondmosfetsoperatingattemperaturesupto400c |