APA (7th ed.) Citation

Liu, J., Teraji, T., Da, B., & Koide, Y. Boron-doped diamond MOSFETs operating at temperatures up to 400°C. Taylor & Francis Group.

Chicago Style (17th ed.) Citation

Liu, Jiangwei, Tokuyuki Teraji, Bo Da, and Yasuo Koide. Boron-doped Diamond MOSFETs Operating at Temperatures Up to 400°C. Taylor & Francis Group.

MLA (9th ed.) Citation

Liu, Jiangwei, et al. Boron-doped Diamond MOSFETs Operating at Temperatures Up to 400°C. Taylor & Francis Group.