Flash array invalid block management
Flash arrays play an important role in data storage today. The key to improve the reliability of Flash array is to propose a reasonable bad management method. For inherently bad blocks, the bad block management method based on integrated block and EEPROM lookup table are proposed. The burst bad bloc...
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| Format: | Article |
| Language: | zho |
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National Computer System Engineering Research Institute of China
2024-03-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000164114 |
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| _version_ | 1849433454920335360 |
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| author | Jiao Xinquan Zhu Zhenlin |
| author_facet | Jiao Xinquan Zhu Zhenlin |
| author_sort | Jiao Xinquan |
| collection | DOAJ |
| description | Flash arrays play an important role in data storage today. The key to improve the reliability of Flash array is to propose a reasonable bad management method. For inherently bad blocks, the bad block management method based on integrated block and EEPROM lookup table are proposed. The burst bad block management method based on page skip and page replacement is proposed for the burst bad block management. The experimental analysis shows that the bad block management method improves the reliability of NAND Flash data storage and maximizes the utilization of NAND Flash storage space while ensuring the storage speed. |
| format | Article |
| id | doaj-art-ea80690b5af244ea94e1fb88fd8bce81 |
| institution | Kabale University |
| issn | 0258-7998 |
| language | zho |
| publishDate | 2024-03-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj-art-ea80690b5af244ea94e1fb88fd8bce812025-08-20T03:27:01ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982024-03-01503424710.16157/j.issn.0258-7998.2343103000164114Flash array invalid block managementJiao Xinquan0Zhu Zhenlin1Key Laboratory of Instrumentation Science and Dynamic Measurement，Ministry of Education， North University of China，Taiyuan 030051，ChinaKey Laboratory of Instrumentation Science and Dynamic Measurement，Ministry of Education， North University of China，Taiyuan 030051，ChinaFlash arrays play an important role in data storage today. The key to improve the reliability of Flash array is to propose a reasonable bad management method. For inherently bad blocks, the bad block management method based on integrated block and EEPROM lookup table are proposed. The burst bad block management method based on page skip and page replacement is proposed for the burst bad block management. The experimental analysis shows that the bad block management method improves the reliability of NAND Flash data storage and maximizes the utilization of NAND Flash storage space while ensuring the storage speed.http://www.chinaaet.com/article/3000164114flash arrayinherent bad blockintegrated blockburst bad block |
| spellingShingle | Jiao Xinquan Zhu Zhenlin Flash array invalid block management Dianzi Jishu Yingyong flash array inherent bad block integrated block burst bad block |
| title | Flash array invalid block management |
| title_full | Flash array invalid block management |
| title_fullStr | Flash array invalid block management |
| title_full_unstemmed | Flash array invalid block management |
| title_short | Flash array invalid block management |
| title_sort | flash array invalid block management |
| topic | flash array inherent bad block integrated block burst bad block |
| url | http://www.chinaaet.com/article/3000164114 |
| work_keys_str_mv | AT jiaoxinquan flasharrayinvalidblockmanagement AT zhuzhenlin flasharrayinvalidblockmanagement |