Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution
The temperature coefficient of the resonant frequency (τf) of low-permittivity (εr) microwave dielectric ceramics is required to be near 0 ppm/°C for practical application. However, owing to the polarization mechanism, τf of low-εr microwave dielectric ceramics is generally negative. Here, a novel m...
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| Format: | Article |
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Tsinghua University Press
2025-02-01
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| Series: | Journal of Advanced Ceramics |
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| Online Access: | https://www.sciopen.com/article/10.26599/JAC.2024.9221020 |
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| author | Jiaqing Yang Peng Lei Xiaoqiang Song Changzhi Yin Meng Zhang Weicheng Lei Yiyang Cai Mingfei Cheng Yaodong Liu Zihang Chen Yaqing Hu Wenzhong Lu Wen Lei |
| author_facet | Jiaqing Yang Peng Lei Xiaoqiang Song Changzhi Yin Meng Zhang Weicheng Lei Yiyang Cai Mingfei Cheng Yaodong Liu Zihang Chen Yaqing Hu Wenzhong Lu Wen Lei |
| author_sort | Jiaqing Yang |
| collection | DOAJ |
| description | The temperature coefficient of the resonant frequency (τf) of low-permittivity (εr) microwave dielectric ceramics is required to be near 0 ppm/°C for practical application. However, owing to the polarization mechanism, τf of low-εr microwave dielectric ceramics is generally negative. Here, a novel microwave dielectric ceramic, Ba3−xSrxMgSi2O8, with an abnormal positive τf at the applied temperature is presented. In this study, Sr2+ with a relatively small ionic radius was introduced to replace Ba2+, and a single-phase solid solution was formed (x > 0.5). Ba3−xSrxMgSi2O8 ceramics were discussed in glaserite-type topology with space groups of P3¯ for x ≤ 0.5, relatively high symmetry P3¯m1 for 0.5 < x < 2.5, and C2 for x ≥ 2.5. The εr peaks as a function of temperature initially shift to low temperatures and then return to high temperatures through an ion substitution strategy. Notably, remarkable microwave dielectric properties for BaSr2MgSi2O8 were observed: εr ≈ 14.2, Q×f ≈ 38,900 GHz, and τf ≈ +117 ppm/°C, which are superior to those of other low-εr silicate ceramics with positive τf values. Density functional theory simulation calculations revealed that the preferential occupation of Sr2+ ions could decrease the intrinsic formation energy and improve the microwave dielectric properties by mitigating the ionic size mismatch within the crystal structure. The present research offers a strategy for discovering novel microwave dielectric ceramics with abnormal τf values, which could serve as τf regulators in practical applications because of their low cost and excellent microwave dielectric properties. |
| format | Article |
| id | doaj-art-ea3c85246f584c6f8bed67fcd0a99c2a |
| institution | OA Journals |
| issn | 2226-4108 2227-8508 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Journal of Advanced Ceramics |
| spelling | doaj-art-ea3c85246f584c6f8bed67fcd0a99c2a2025-08-20T02:04:30ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-02-01142922102010.26599/JAC.2024.9221020Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solutionJiaqing Yang0Peng Lei1Xiaoqiang Song2Changzhi Yin3Meng Zhang4Weicheng Lei5Yiyang Cai6Mingfei Cheng7Yaodong Liu8Zihang Chen9Yaqing Hu10Wenzhong Lu11Wen Lei12School of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaWenzhou Key Laboratory of Microwave Communication Materials and Devices, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325035, ChinaWenzhou Key Laboratory of Microwave Communication Materials and Devices, Wenzhou Advanced Manufacturing Institute of HUST, Wenzhou 325035, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaSchool of Optical and Electronic Information, Key Lab of Functional Materials for Electronic Information (B) of MOE, Huazhong University of Science and Technology, Wuhan 430074, ChinaThe temperature coefficient of the resonant frequency (τf) of low-permittivity (εr) microwave dielectric ceramics is required to be near 0 ppm/°C for practical application. However, owing to the polarization mechanism, τf of low-εr microwave dielectric ceramics is generally negative. Here, a novel microwave dielectric ceramic, Ba3−xSrxMgSi2O8, with an abnormal positive τf at the applied temperature is presented. In this study, Sr2+ with a relatively small ionic radius was introduced to replace Ba2+, and a single-phase solid solution was formed (x > 0.5). Ba3−xSrxMgSi2O8 ceramics were discussed in glaserite-type topology with space groups of P3¯ for x ≤ 0.5, relatively high symmetry P3¯m1 for 0.5 < x < 2.5, and C2 for x ≥ 2.5. The εr peaks as a function of temperature initially shift to low temperatures and then return to high temperatures through an ion substitution strategy. Notably, remarkable microwave dielectric properties for BaSr2MgSi2O8 were observed: εr ≈ 14.2, Q×f ≈ 38,900 GHz, and τf ≈ +117 ppm/°C, which are superior to those of other low-εr silicate ceramics with positive τf values. Density functional theory simulation calculations revealed that the preferential occupation of Sr2+ ions could decrease the intrinsic formation energy and improve the microwave dielectric properties by mitigating the ionic size mismatch within the crystal structure. The present research offers a strategy for discovering novel microwave dielectric ceramics with abnormal τf values, which could serve as τf regulators in practical applications because of their low cost and excellent microwave dielectric properties.https://www.sciopen.com/article/10.26599/JAC.2024.9221020microwave dielectric ceramicsabnormal dielectric behaviorion size mismatch[sio4] tetrahedra tiltingphase transitiondensity functional theory (dft) |
| spellingShingle | Jiaqing Yang Peng Lei Xiaoqiang Song Changzhi Yin Meng Zhang Weicheng Lei Yiyang Cai Mingfei Cheng Yaodong Liu Zihang Chen Yaqing Hu Wenzhong Lu Wen Lei Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution Journal of Advanced Ceramics microwave dielectric ceramics abnormal dielectric behavior ion size mismatch [sio4] tetrahedra tilting phase transition density functional theory (dft) |
| title | Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution |
| title_full | Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution |
| title_fullStr | Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution |
| title_full_unstemmed | Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution |
| title_short | Abnormal dielectric behavior of glaserite-type Ba3−xSrxMgSi2O8 solid solution |
| title_sort | abnormal dielectric behavior of glaserite type ba3 xsrxmgsi2o8 solid solution |
| topic | microwave dielectric ceramics abnormal dielectric behavior ion size mismatch [sio4] tetrahedra tilting phase transition density functional theory (dft) |
| url | https://www.sciopen.com/article/10.26599/JAC.2024.9221020 |
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