Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology
In the design of silicon parameters of high voltage thyristor device, the flatness of PN junction formed by different kinds of diffusion process is one of the key factors in the manufacturing. In order to obtain better dynamic and static characteristics of high voltage fast thyristor, starting with...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.008 |
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