Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology
In the design of silicon parameters of high voltage thyristor device, the flatness of PN junction formed by different kinds of diffusion process is one of the key factors in the manufacturing. In order to obtain better dynamic and static characteristics of high voltage fast thyristor, starting with...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2017-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
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| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.008 |
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| author | YIN Dengjie HE Zhenqing LI Yong JIAO Shasha |
| author_facet | YIN Dengjie HE Zhenqing LI Yong JIAO Shasha |
| author_sort | YIN Dengjie |
| collection | DOAJ |
| description | In the design of silicon parameters of high voltage thyristor device, the flatness of PN junction formed by different kinds of diffusion process is one of the key factors in the manufacturing. In order to obtain better dynamic and static characteristics of high voltage fast thyristor, starting with manufacturing process, the flatness difference of PN junction formed by vacuum deposited aluminum diffusion and close-tube aluminum diffusion process was discussed firstly, then through the theoretical calculation and Silvaco simulation, the relationship between the voltage of the device and the junction depth was obtained, and based on the consideration of the flatness of PN junction, the minimum thickness of silicon under two different conditions was designed. Experimental results showed that the performance optimization of the device was obvious based on the vacuum deposited aluminum diffusion technology and its optimum silicon parameters. |
| format | Article |
| id | doaj-art-ea324deab08449e9a6baa4ed8f70d83f |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2017-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-ea324deab08449e9a6baa4ed8f70d83f2025-08-25T06:54:44ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272017-01-0134384182328994Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion TechnologyYIN DengjieHE ZhenqingLI YongJIAO ShashaIn the design of silicon parameters of high voltage thyristor device, the flatness of PN junction formed by different kinds of diffusion process is one of the key factors in the manufacturing. In order to obtain better dynamic and static characteristics of high voltage fast thyristor, starting with manufacturing process, the flatness difference of PN junction formed by vacuum deposited aluminum diffusion and close-tube aluminum diffusion process was discussed firstly, then through the theoretical calculation and Silvaco simulation, the relationship between the voltage of the device and the junction depth was obtained, and based on the consideration of the flatness of PN junction, the minimum thickness of silicon under two different conditions was designed. Experimental results showed that the performance optimization of the device was obvious based on the vacuum deposited aluminum diffusion technology and its optimum silicon parameters.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.008vacuum deposited aluminum diffusionclose-tube aluminum diffusionPN junctionwafer thicknessfast switching thyristor |
| spellingShingle | YIN Dengjie HE Zhenqing LI Yong JIAO Shasha Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology Kongzhi Yu Xinxi Jishu vacuum deposited aluminum diffusion close-tube aluminum diffusion PN junction wafer thickness fast switching thyristor |
| title | Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology |
| title_full | Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology |
| title_fullStr | Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology |
| title_full_unstemmed | Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology |
| title_short | Performance Optimization of High Voltage Thyristor Based on Vacuum Deposited Aluminum Diffusion Technology |
| title_sort | performance optimization of high voltage thyristor based on vacuum deposited aluminum diffusion technology |
| topic | vacuum deposited aluminum diffusion close-tube aluminum diffusion PN junction wafer thickness fast switching thyristor |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2017.06.008 |
| work_keys_str_mv | AT yindengjie performanceoptimizationofhighvoltagethyristorbasedonvacuumdepositedaluminumdiffusiontechnology AT hezhenqing performanceoptimizationofhighvoltagethyristorbasedonvacuumdepositedaluminumdiffusiontechnology AT liyong performanceoptimizationofhighvoltagethyristorbasedonvacuumdepositedaluminumdiffusiontechnology AT jiaoshasha performanceoptimizationofhighvoltagethyristorbasedonvacuumdepositedaluminumdiffusiontechnology |