Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films

Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films

AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal qualit...

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Bibliographic Details
Main Authors: J Patouillard, R Gassilloud, F Mercier, A Dussaigne, B Hyot, M Bernard, S Cadot, N Gauthier, N Vaxelaire, N Bernier, F Martin, C Raynaud, F Gianesello, A Mantoux, E Blanquet
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:JPhys Materials
Subjects:
sputtering
MoS2
AlN
c-axis
NH3
Online Access:https://doi.org/10.1088/2515-7639/adc3cb
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