Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films
AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal qualit...
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| Format: | Article |
| Language: | English |
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IOP Publishing
2025-01-01
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| Series: | JPhys Materials |
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| Online Access: | https://doi.org/10.1088/2515-7639/adc3cb |
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| author | J Patouillard R Gassilloud F Mercier A Dussaigne B Hyot M Bernard S Cadot N Gauthier N Vaxelaire N Bernier F Martin C Raynaud F Gianesello A Mantoux E Blanquet |
| author_facet | J Patouillard R Gassilloud F Mercier A Dussaigne B Hyot M Bernard S Cadot N Gauthier N Vaxelaire N Bernier F Martin C Raynaud F Gianesello A Mantoux E Blanquet |
| author_sort | J Patouillard |
| collection | DOAJ |
| description | AlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal quality. However, after deposition of thick sputtered AlN films (⩾200 nm), a systematic delamination of the AlN/MoS _2 stack appears, drastically limiting the integration of these materials in RF devices. We propose a new elaboration process to grow thick AlN films with improved crystal quality while avoiding the delamination issue. This process is based on the chemical conversion of the MoS _2 layer through a very thin 5 nm AlN seed using a 1000 °C NH _3 heat treatment at 400 mbar. We show a trade-off between the AlN thickness and the reactive annealing conditions to allow the diffusion of nitrogen towards the underlaying MoS _2 and its conversion into Mo(O _x )N _y . Then, we observe that after the heat treatment, it is still possible to grow thick AlN epitaxial films without any delamination on the substrate while still improving the AlN crystal quality. Using this new route, a 1 µ m thick sputtered AlN layer with a record AlN (002) rocking curve value of 0.71 °C on a silicon-based substrate was obtained without any cracks or delamination. |
| format | Article |
| id | doaj-art-e9fabe55c3074f1b811fd28b3de82a97 |
| institution | DOAJ |
| issn | 2515-7639 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | JPhys Materials |
| spelling | doaj-art-e9fabe55c3074f1b811fd28b3de82a972025-08-20T03:16:50ZengIOP PublishingJPhys Materials2515-76392025-01-018202501410.1088/2515-7639/adc3cbThermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN filmsJ Patouillard0https://orcid.org/0000-0002-1277-9221R Gassilloud1F Mercier2https://orcid.org/0000-0002-5210-857XA Dussaigne3B Hyot4https://orcid.org/0000-0001-6021-9256M Bernard5S Cadot6N Gauthier7N Vaxelaire8N Bernier9F Martin10C Raynaud11F Gianesello12A Mantoux13E Blanquet14Université Grenoble Alpes , CEA, LETI, F-38000, Grenoble, France; University Grenoble Alpes CNRS, Grenoble INP, SIMaP , 38000 Grenoble, France; STMicroelectronics , 850 rue Jean Monnet, F-38926 Crolles, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversity Grenoble Alpes CNRS, Grenoble INP, SIMaP , 38000 Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceUniversité Grenoble Alpes , CEA, LETI, F-38000, Grenoble, FranceSTMicroelectronics , 850 rue Jean Monnet, F-38926 Crolles, FranceUniversity Grenoble Alpes CNRS, Grenoble INP, SIMaP , 38000 Grenoble, FranceUniversity Grenoble Alpes CNRS, Grenoble INP, SIMaP , 38000 Grenoble, FranceAlN-based acoustic filters are key devices in radio frequency communications. The AlN material crystal quality on silicon substrates limits the current performances of these devices. Atomic layer deposition -grown 2D-MoS _2 thin film can be used as a template on silicon to improve AlN crystal quality. However, after deposition of thick sputtered AlN films (⩾200 nm), a systematic delamination of the AlN/MoS _2 stack appears, drastically limiting the integration of these materials in RF devices. We propose a new elaboration process to grow thick AlN films with improved crystal quality while avoiding the delamination issue. This process is based on the chemical conversion of the MoS _2 layer through a very thin 5 nm AlN seed using a 1000 °C NH _3 heat treatment at 400 mbar. We show a trade-off between the AlN thickness and the reactive annealing conditions to allow the diffusion of nitrogen towards the underlaying MoS _2 and its conversion into Mo(O _x )N _y . Then, we observe that after the heat treatment, it is still possible to grow thick AlN epitaxial films without any delamination on the substrate while still improving the AlN crystal quality. Using this new route, a 1 µ m thick sputtered AlN layer with a record AlN (002) rocking curve value of 0.71 °C on a silicon-based substrate was obtained without any cracks or delamination.https://doi.org/10.1088/2515-7639/adc3cbsputteringMoS2AlNc-axisNH3 |
| spellingShingle | J Patouillard R Gassilloud F Mercier A Dussaigne B Hyot M Bernard S Cadot N Gauthier N Vaxelaire N Bernier F Martin C Raynaud F Gianesello A Mantoux E Blanquet Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films JPhys Materials sputtering MoS2 AlN c-axis NH3 |
| title | Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films |
| title_full | Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films |
| title_fullStr | Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films |
| title_full_unstemmed | Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films |
| title_short | Thermochemical treatment of sputtered-AlN/2D MoS2 seed layers: a new elaboration process of highly c-axis AlN films |
| title_sort | thermochemical treatment of sputtered aln 2d mos2 seed layers a new elaboration process of highly c axis aln films |
| topic | sputtering MoS2 AlN c-axis NH3 |
| url | https://doi.org/10.1088/2515-7639/adc3cb |
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