High-temperature Reliability of 1 200 V SiC Power MOSFETs
High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.013 |
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| _version_ | 1849224841044951040 |
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| author | DENG Xiaochuan CHEN Xixi WANG Yiyu SHEN Huajun TANG Yachao GAO Yunbing |
| author_facet | DENG Xiaochuan CHEN Xixi WANG Yiyu SHEN Huajun TANG Yachao GAO Yunbing |
| author_sort | DENG Xiaochuan |
| collection | DOAJ |
| description | High-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability was analyzed after high temperature gate-bias test (HTGB) and high temperature reversebias test (HTRB). The experimental results indicated that after 168 hours HTGB and HTRB tests, breakdown voltage of the fabricated samples is more than 1 200 V and the variations of threshold voltage and on-resistance are less than 15% respectively, suggesting good robustness of these devices. It also confirms the feasibility of the design, process and fabrication of domestic 1 200 V SiC MOSFETs. |
| format | Article |
| id | doaj-art-e9b9bb9f04484f26b13f2b09e8429406 |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2016-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-e9b9bb9f04484f26b13f2b09e84294062025-08-25T06:53:59ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272016-01-01626482326159High-temperature Reliability of 1 200 V SiC Power MOSFETsDENG XiaochuanCHEN XixiWANG YiyuSHEN HuajunTANG YachaoGAO YunbingHigh-temperature reliability is currently a key issue limiting the application of SiC MOSFET devices in high-temperature environment. It intruduced the DC electrical performance of 1 200 V SiC MOSFETs, which was fabricated based on domestic process platform, and then its high-temperature reliability was analyzed after high temperature gate-bias test (HTGB) and high temperature reversebias test (HTRB). The experimental results indicated that after 168 hours HTGB and HTRB tests, breakdown voltage of the fabricated samples is more than 1 200 V and the variations of threshold voltage and on-resistance are less than 15% respectively, suggesting good robustness of these devices. It also confirms the feasibility of the design, process and fabrication of domestic 1 200 V SiC MOSFETs.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.013SiC MOSFETHTGBHTRBreliability |
| spellingShingle | DENG Xiaochuan CHEN Xixi WANG Yiyu SHEN Huajun TANG Yachao GAO Yunbing High-temperature Reliability of 1 200 V SiC Power MOSFETs Kongzhi Yu Xinxi Jishu SiC MOSFET HTGB HTRB reliability |
| title | High-temperature Reliability of 1 200 V SiC Power MOSFETs |
| title_full | High-temperature Reliability of 1 200 V SiC Power MOSFETs |
| title_fullStr | High-temperature Reliability of 1 200 V SiC Power MOSFETs |
| title_full_unstemmed | High-temperature Reliability of 1 200 V SiC Power MOSFETs |
| title_short | High-temperature Reliability of 1 200 V SiC Power MOSFETs |
| title_sort | high temperature reliability of 1 200 v sic power mosfets |
| topic | SiC MOSFET HTGB HTRB reliability |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.013 |
| work_keys_str_mv | AT dengxiaochuan hightemperaturereliabilityof1200vsicpowermosfets AT chenxixi hightemperaturereliabilityof1200vsicpowermosfets AT wangyiyu hightemperaturereliabilityof1200vsicpowermosfets AT shenhuajun hightemperaturereliabilityof1200vsicpowermosfets AT tangyachao hightemperaturereliabilityof1200vsicpowermosfets AT gaoyunbing hightemperaturereliabilityof1200vsicpowermosfets |