Modeling of Surface Potential and Threshold Voltage of LDD nMOSFET's with Localized Defects
We propose a model of the surface potential and the threshold voltage for submicron lightly-doped drain LDD nMOSFET’s in relation with the localized defects at the interface Si–SiO2 in the overlap n‾ LDD region. Calculating the surface potential in the intrinsic and the LDD regions by solving the 2-...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2000-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.61 |
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