Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operat...
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| Format: | Article |
| Language: | English |
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Taylor & Francis Group
2024-12-01
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| Series: | Cogent Engineering |
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| Online Access: | https://www.tandfonline.com/doi/10.1080/23311916.2024.2406381 |
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| author | Hima Bindu Valiveti Indr Jeet Rajput N. Udaya Kumar Harsh Lohiya R. Sri Uma Suseela Atul Singla Saurabh Rajvanshi |
| author_facet | Hima Bindu Valiveti Indr Jeet Rajput N. Udaya Kumar Harsh Lohiya R. Sri Uma Suseela Atul Singla Saurabh Rajvanshi |
| author_sort | Hima Bindu Valiveti |
| collection | DOAJ |
| description | When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operational speed of the devices. Leakages are a significant adverse consequence of transistor miniaturization which is addressed in the ongoing study. The design of 10 nm NanoSheet FinFET (NS-FinFET) using Gate All Around (GAA) technology with Silicon On Insulator (SOI) is structured using a Visual Technology Computer-Aided Design (Visual TCAD) simulator. The work emphasizes on uniformly doped multi-channel SOI NS-FinFET with varying Doping Concentrations ranging between 1 × 1016 and 1 × 1018. The different space regions include those with single dielectric materials, such as (Air, SiO2 and HfO2), and dual dielectric materials, such as (HfO2 + SiO2). The effects of GAA nm-technology NS-FinFET devices are comprehensively examined for parameters including (VGS-ID) transfer characteristics, Threshold Voltage (Vth), Ion/Ioff ratio and Subthreshold Swing (SS) by varying doping concentrations and space materials. |
| format | Article |
| id | doaj-art-e98e4e1ce6294f4790a7303cc1deee49 |
| institution | OA Journals |
| issn | 2331-1916 |
| language | English |
| publishDate | 2024-12-01 |
| publisher | Taylor & Francis Group |
| record_format | Article |
| series | Cogent Engineering |
| spelling | doaj-art-e98e4e1ce6294f4790a7303cc1deee492025-08-20T01:56:14ZengTaylor & Francis GroupCogent Engineering2331-19162024-12-0111110.1080/23311916.2024.2406381Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrationsHima Bindu Valiveti0Indr Jeet Rajput1N. Udaya Kumar2Harsh Lohiya3R. Sri Uma Suseela4Atul Singla5Saurabh Rajvanshi6Department of ECE, Gokaraju Angara Institute of Engineering and Technology, Hyderabad, IndiaDepartment of CSE, Indus Institute of Technology and Engineering (IITE), Ahmedabad, IndiaDepartment of ECE, Vivekananda Institute of Technology, Bangalore, IndiaDepartment of CSE, School of Engineering, SSSUTMS, Sehore, IndiaDepartment of ECE, Vishnu Institute of Technology, Bhimavaram, IndiaSchool of Architecture, Lovely Professional University, Phagwara, IndiaSchool of Management, Uttaranchal University, Dehradun, IndiaWhen developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized channels with shorter lengths tend to increase operational speed of the devices. Leakages are a significant adverse consequence of transistor miniaturization which is addressed in the ongoing study. The design of 10 nm NanoSheet FinFET (NS-FinFET) using Gate All Around (GAA) technology with Silicon On Insulator (SOI) is structured using a Visual Technology Computer-Aided Design (Visual TCAD) simulator. The work emphasizes on uniformly doped multi-channel SOI NS-FinFET with varying Doping Concentrations ranging between 1 × 1016 and 1 × 1018. The different space regions include those with single dielectric materials, such as (Air, SiO2 and HfO2), and dual dielectric materials, such as (HfO2 + SiO2). The effects of GAA nm-technology NS-FinFET devices are comprehensively examined for parameters including (VGS-ID) transfer characteristics, Threshold Voltage (Vth), Ion/Ioff ratio and Subthreshold Swing (SS) by varying doping concentrations and space materials.https://www.tandfonline.com/doi/10.1080/23311916.2024.2406381NanoSheet FinFET (NS-FinFET)gate all around (GAA)silicon on insulator (SOI)low K and high K dielectric materialdoping concentrationshort channel effect (SCE) |
| spellingShingle | Hima Bindu Valiveti Indr Jeet Rajput N. Udaya Kumar Harsh Lohiya R. Sri Uma Suseela Atul Singla Saurabh Rajvanshi Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations Cogent Engineering NanoSheet FinFET (NS-FinFET) gate all around (GAA) silicon on insulator (SOI) low K and high K dielectric material doping concentration short channel effect (SCE) |
| title | Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations |
| title_full | Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations |
| title_fullStr | Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations |
| title_full_unstemmed | Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations |
| title_short | Design and analysis of multichannel 10 nm nanosheet FinFET varying space region materials and doping concentrations |
| title_sort | design and analysis of multichannel 10 nm nanosheet finfet varying space region materials and doping concentrations |
| topic | NanoSheet FinFET (NS-FinFET) gate all around (GAA) silicon on insulator (SOI) low K and high K dielectric material doping concentration short channel effect (SCE) |
| url | https://www.tandfonline.com/doi/10.1080/23311916.2024.2406381 |
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