Effects of the interacting defects composed of intrinsic stacking faults and inversion domain boundaries on the mechanical property of w-BN phase
Wurtzite Boron Nitride (w-BN) is highly promising for advanced electronics due to superhardness, wide bandgap, and high thermal conductivity. And the intrinsic defects play a critical role in affecting the thermal stability and mechanical properties. This study investigates the cohesive energy and m...
Saved in:
| Main Authors: | Jiang Li, Tao Fu, Deqiang Yin |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-07-01
|
| Series: | Journal of Materials Research and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2238785425017521 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Prediction of Thermal Transport Properties of Pristine and BN-Substituted Holey Graphynes
by: Qingchen Li, et al.
Published: (2025-04-01) -
Tuning Electronic Structure and Optical Properties of Monolayered h-BN by Doping C, Cu and Al
by: Qun Li, et al.
Published: (2025-01-01) -
Novel gas sensing mechanisms of Pd and Rh-doped h-BN monolayers for detecting dissolved gases (H2、CH4、and C2H4) in transformer oil
by: Jiaming Jiang, et al.
Published: (2024-12-01) -
First-Principle Calculations on O-Doped Hexagonal Boron Nitride (H-BN) for Carbon Dioxide (CO<sub>2</sub>) Reduction into C1 Products
by: Guoliang Liu
Published: (2024-12-01) -
La réception musicale dans les chansonniers de troubadours : le cas du chansonnier R, Paris BnF fr. 22543
by: Christelle Chaillou-Amadieu
Published: (2020-12-01)