An Analytical Study on the Local Electronic Density of States of the Valence Bands in Amorphous Silicon Carbide
A formulation for the energy-averaged local valence band density of states of amorphous silicon carbide is derived. To this end, sp3-type hybrid orbitals are employed.
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/1998/34707 |
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