Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer
In this study, we investigated and compared the influence of alumina nanoparticles (Al-NPs) and silicon nitride (SiN<sub>x</sub>) layers individually deposited on multi-crystalline silicon (mc-Si) on mc-Si’s structural, optical, and optoelectronic characteristics to improve surface quali...
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2025-04-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/15/4/381 |
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| author | Mohamed Ben Rabha Ameny El Haj Achref Mannai Karim Choubani Mohammed A. Almeshaal Wissem Dimassi |
| author_facet | Mohamed Ben Rabha Ameny El Haj Achref Mannai Karim Choubani Mohammed A. Almeshaal Wissem Dimassi |
| author_sort | Mohamed Ben Rabha |
| collection | DOAJ |
| description | In this study, we investigated and compared the influence of alumina nanoparticles (Al-NPs) and silicon nitride (SiN<sub>x</sub>) layers individually deposited on multi-crystalline silicon (mc-Si) on mc-Si’s structural, optical, and optoelectronic characteristics to improve surface quality. Alumina nanoparticle-covered multi-crystalline silicon, immersion in HF/H<sub>2</sub>O<sub>2</sub>/HNO<sub>3</sub>, and porous silicon (PS) covered with a silicon nitride structure are key components in achieving high electronic quality in multi-crystalline silicon. Surface reflectivity decreased from 27% to a minimum value of 2% for alumina nanoparticles/PS and a minimum value of 5% for silicon nitride/PS at a wavelength of 930 nm. Meanwhile, the minority carrier diffusion length increased from 2 µm to 300 µm for porous silicon combined with silicon nitride and to 100 µm for alumina nanoparticles/porous silicon. Two-dimensional current mapping further demonstrated a considerable enhancement in the generated current, rising from 2.8 nA for untreated mc-Si to 34 nA for Al-NPs/PS and 66 nA for PS/SiN<sub>x</sub>. These results confirm that the surface passivation of mc-Si using Al-NPs or PS combined with SiN<sub>x</sub> is a promising and efficient method to improve the electrical quality of mc-Si wafers, contributing to the development of high-performance mc-Si-based solar cells. |
| format | Article |
| id | doaj-art-e8d96d1ea6c54779985e705e22e76c80 |
| institution | DOAJ |
| issn | 2073-4352 |
| language | English |
| publishDate | 2025-04-01 |
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| series | Crystals |
| spelling | doaj-art-e8d96d1ea6c54779985e705e22e76c802025-08-20T03:13:46ZengMDPI AGCrystals2073-43522025-04-0115438110.3390/cryst15040381Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> LayerMohamed Ben Rabha0Ameny El Haj1Achref Mannai2Karim Choubani3Mohammed A. Almeshaal4Wissem Dimassi5Laboratoire de Nanomatériaux et Systèmes pour Énergies Renouvelables, Centre de Recherches et des Technologies de l’Énergie, Technopôle de Borj-Cédria, BP 95 Hammam-Lif, Tunis 2050, TunisiaLaboratoire de Nanomatériaux et Systèmes pour Énergies Renouvelables, Centre de Recherches et des Technologies de l’Énergie, Technopôle de Borj-Cédria, BP 95 Hammam-Lif, Tunis 2050, TunisiaLaboratoire de Nanomatériaux et Systèmes pour Énergies Renouvelables, Centre de Recherches et des Technologies de l’Énergie, Technopôle de Borj-Cédria, BP 95 Hammam-Lif, Tunis 2050, TunisiaCollege of Engineering, Imam Mohammad Ibn Saud Islamic University, Riyadh 11432, Saudi ArabiaCollege of Engineering, Imam Mohammad Ibn Saud Islamic University, Riyadh 11432, Saudi ArabiaLaboratoire de Nanomatériaux et Systèmes pour Énergies Renouvelables, Centre de Recherches et des Technologies de l’Énergie, Technopôle de Borj-Cédria, BP 95 Hammam-Lif, Tunis 2050, TunisiaIn this study, we investigated and compared the influence of alumina nanoparticles (Al-NPs) and silicon nitride (SiN<sub>x</sub>) layers individually deposited on multi-crystalline silicon (mc-Si) on mc-Si’s structural, optical, and optoelectronic characteristics to improve surface quality. Alumina nanoparticle-covered multi-crystalline silicon, immersion in HF/H<sub>2</sub>O<sub>2</sub>/HNO<sub>3</sub>, and porous silicon (PS) covered with a silicon nitride structure are key components in achieving high electronic quality in multi-crystalline silicon. Surface reflectivity decreased from 27% to a minimum value of 2% for alumina nanoparticles/PS and a minimum value of 5% for silicon nitride/PS at a wavelength of 930 nm. Meanwhile, the minority carrier diffusion length increased from 2 µm to 300 µm for porous silicon combined with silicon nitride and to 100 µm for alumina nanoparticles/porous silicon. Two-dimensional current mapping further demonstrated a considerable enhancement in the generated current, rising from 2.8 nA for untreated mc-Si to 34 nA for Al-NPs/PS and 66 nA for PS/SiN<sub>x</sub>. These results confirm that the surface passivation of mc-Si using Al-NPs or PS combined with SiN<sub>x</sub> is a promising and efficient method to improve the electrical quality of mc-Si wafers, contributing to the development of high-performance mc-Si-based solar cells.https://www.mdpi.com/2073-4352/15/4/381multi-crystalline siliconporous siliconalumina nanoparticlessilicon nitridetwo-dimensional produced currentdiffusion length |
| spellingShingle | Mohamed Ben Rabha Ameny El Haj Achref Mannai Karim Choubani Mohammed A. Almeshaal Wissem Dimassi Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer Crystals multi-crystalline silicon porous silicon alumina nanoparticles silicon nitride two-dimensional produced current diffusion length |
| title | Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer |
| title_full | Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer |
| title_fullStr | Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer |
| title_full_unstemmed | Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer |
| title_short | Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer |
| title_sort | enhancement of optoelectronic properties of multicrystalline silicon using al nps and sin sub x sub layer |
| topic | multi-crystalline silicon porous silicon alumina nanoparticles silicon nitride two-dimensional produced current diffusion length |
| url | https://www.mdpi.com/2073-4352/15/4/381 |
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