Enhancement of Optoelectronic Properties of Multicrystalline Silicon Using Al-NPs and SiN<sub>x</sub> Layer
In this study, we investigated and compared the influence of alumina nanoparticles (Al-NPs) and silicon nitride (SiN<sub>x</sub>) layers individually deposited on multi-crystalline silicon (mc-Si) on mc-Si’s structural, optical, and optoelectronic characteristics to improve surface quali...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2025-04-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/15/4/381 |
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| Summary: | In this study, we investigated and compared the influence of alumina nanoparticles (Al-NPs) and silicon nitride (SiN<sub>x</sub>) layers individually deposited on multi-crystalline silicon (mc-Si) on mc-Si’s structural, optical, and optoelectronic characteristics to improve surface quality. Alumina nanoparticle-covered multi-crystalline silicon, immersion in HF/H<sub>2</sub>O<sub>2</sub>/HNO<sub>3</sub>, and porous silicon (PS) covered with a silicon nitride structure are key components in achieving high electronic quality in multi-crystalline silicon. Surface reflectivity decreased from 27% to a minimum value of 2% for alumina nanoparticles/PS and a minimum value of 5% for silicon nitride/PS at a wavelength of 930 nm. Meanwhile, the minority carrier diffusion length increased from 2 µm to 300 µm for porous silicon combined with silicon nitride and to 100 µm for alumina nanoparticles/porous silicon. Two-dimensional current mapping further demonstrated a considerable enhancement in the generated current, rising from 2.8 nA for untreated mc-Si to 34 nA for Al-NPs/PS and 66 nA for PS/SiN<sub>x</sub>. These results confirm that the surface passivation of mc-Si using Al-NPs or PS combined with SiN<sub>x</sub> is a promising and efficient method to improve the electrical quality of mc-Si wafers, contributing to the development of high-performance mc-Si-based solar cells. |
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| ISSN: | 2073-4352 |