Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors
Abstract Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios, which can effectively improve the recognition rate of objects. However, in the existing technical scenarios, it is usually necessary to use complex optical devices such as fil...
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Wiley
2025-06-01
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| Online Access: | https://doi.org/10.1002/inf2.12661 |
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| author | Bo Wang Ningning Zhang Jie You Xin Wu Yichi Zhang Tian Miao Yang Liu Zuimin Jiang Zhenyang Zhong Hao Sun Hui Guo Huiyong Hu Liming Wang Zhangming Zhu |
| author_facet | Bo Wang Ningning Zhang Jie You Xin Wu Yichi Zhang Tian Miao Yang Liu Zuimin Jiang Zhenyang Zhong Hao Sun Hui Guo Huiyong Hu Liming Wang Zhangming Zhu |
| author_sort | Bo Wang |
| collection | DOAJ |
| description | Abstract Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios, which can effectively improve the recognition rate of objects. However, in the existing technical scenarios, it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction. These methods inevitably bring about the problems of complex structure and low integration. Therefore, it is necessary to realize the wavelength extraction function at the device level. Here, we realize the wavelength extraction function and wide‐spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near‐infrared (NIR) photogating layer configuration. Under infrared irradiation, the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect, and realizes visible positive light response through the absorption of visible light by MoS2. Utilizing the memory function of the device, by cleverly changing the gate voltage pulse, the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states: visible light response only, response to both visible and infrared light, and infrared light response only. Active selective imaging of the word “XDU” was achieved at 532 and 1550 nm wavelength. By using the photoresponse data of the device, the passive imaging of the topography of Xi'an, Shaanxi Province was obtained, which effectively improves the recognition rate of mountains and rivers. The proposed reconfigurable visible–infrared wavelength‐selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure. The single‐chip‐based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications. |
| format | Article |
| id | doaj-art-e8a496dd6a664659b9a4febb99376424 |
| institution | DOAJ |
| issn | 2567-3165 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley |
| record_format | Article |
| series | InfoMat |
| spelling | doaj-art-e8a496dd6a664659b9a4febb993764242025-08-20T03:21:34ZengWileyInfoMat2567-31652025-06-0176n/an/a10.1002/inf2.12661Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistorsBo Wang0Ningning Zhang1Jie You2Xin Wu3Yichi Zhang4Tian Miao5Yang Liu6Zuimin Jiang7Zhenyang Zhong8Hao Sun9Hui Guo10Huiyong Hu11Liming Wang12Zhangming Zhu13Key Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaSchool of Optoelectronic Engineering Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaState Key Laboratory of Surface Physics, Department of Physics Fudan University Shanghai the People's Republic of ChinaState Key Laboratory of Surface Physics, Department of Physics Fudan University Shanghai the People's Republic of ChinaSchool of Optoelectronic Engineering Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaKey Laboratory of Analog Integrated Circuits and Systems (Ministry of Education), School of Integrated Circuits Xidian University Xi'an the People's Republic of ChinaAbstract Wavelength selective imaging has a wide range of applications in image recognition and other application scenarios, which can effectively improve the recognition rate of objects. However, in the existing technical scenarios, it is usually necessary to use complex optical devices such as filters or gratings to achieve wavelength extraction. These methods inevitably bring about the problems of complex structure and low integration. Therefore, it is necessary to realize the wavelength extraction function at the device level. Here, we realize the wavelength extraction function and wide‐spectrum imaging function in the visible to infrared band based on a visible light absorber/floating gate storage layer/near‐infrared (NIR) photogating layer configuration. Under infrared irradiation, the device exhibits negative photoresponse through the absorption of infrared light by the Ge substrate and the photogating effect, and realizes visible positive light response through the absorption of visible light by MoS2. Utilizing the memory function of the device, by cleverly changing the gate voltage pulse, the photoresponse state of the output voltage is effectively adjusted to achieve three imaging states: visible light response only, response to both visible and infrared light, and infrared light response only. Active selective imaging of the word “XDU” was achieved at 532 and 1550 nm wavelength. By using the photoresponse data of the device, the passive imaging of the topography of Xi'an, Shaanxi Province was obtained, which effectively improves the recognition rate of mountains and rivers. The proposed reconfigurable visible–infrared wavelength‐selective imaging photodetector can effectively extract image information and improve the image recognition rate while ensuring a simple structure. The single‐chip‐based spectral separation imaging solution lays a good foundation for the further development of visible–infrared vision applications.https://doi.org/10.1002/inf2.12661floating‐gate phototransistorsvisible–near‐infraredwavelength‐selective photodetection |
| spellingShingle | Bo Wang Ningning Zhang Jie You Xin Wu Yichi Zhang Tian Miao Yang Liu Zuimin Jiang Zhenyang Zhong Hao Sun Hui Guo Huiyong Hu Liming Wang Zhangming Zhu Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors InfoMat floating‐gate phototransistors visible–near‐infrared wavelength‐selective photodetection |
| title | Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors |
| title_full | Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors |
| title_fullStr | Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors |
| title_full_unstemmed | Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors |
| title_short | Visible–near‐infrared wavelength‐selective photodetection and imaging based on floating‐gate phototransistors |
| title_sort | visible near infrared wavelength selective photodetection and imaging based on floating gate phototransistors |
| topic | floating‐gate phototransistors visible–near‐infrared wavelength‐selective photodetection |
| url | https://doi.org/10.1002/inf2.12661 |
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