Silicon orientations to grow semi-polar AlN
Abstract The growth of non-polar GaN on Si substrates is a grand challenge in developing light-emitting diodes, where AlN layers serve as buffers to mitigate the lattice mismatch between GaN and Si in practice. Even though, the primary difficulty aries from the predominant growth of polar AlN(0001)...
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Nature Portfolio
2025-05-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-025-59613-5 |
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| author | Ji-Li Li Ye-Fei Li Zhi-Pan Liu |
| author_facet | Ji-Li Li Ye-Fei Li Zhi-Pan Liu |
| author_sort | Ji-Li Li |
| collection | DOAJ |
| description | Abstract The growth of non-polar GaN on Si substrates is a grand challenge in developing light-emitting diodes, where AlN layers serve as buffers to mitigate the lattice mismatch between GaN and Si in practice. Even though, the primary difficulty aries from the predominant growth of polar AlN(0001) layers. Here we demonstrate that stepped Si(320) can establish a high-quality interface with the semi-polar AlN(22 $$\bar{4}1$$ 4 ¯ 1 ) as identified through machine-learning-based structure predictions that explored millions of potential interface configurations. This interface exhibits atomic-matching with low interface energy, and importantly, features reduced polarization (0.20 C/m2) along with superior interfacial thermal conductance (0.47 GWm-2K-1). |
| format | Article |
| id | doaj-art-e88e5124f6f447368cf028108c4e44eb |
| institution | DOAJ |
| issn | 2041-1723 |
| language | English |
| publishDate | 2025-05-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj-art-e88e5124f6f447368cf028108c4e44eb2025-08-20T03:09:20ZengNature PortfolioNature Communications2041-17232025-05-011611610.1038/s41467-025-59613-5Silicon orientations to grow semi-polar AlNJi-Li Li0Ye-Fei Li1Zhi-Pan Liu2State Key Laboratory of Porous Materials for Separation and Conversion, Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Key Laboratory of Computational Physical Science, Department of Chemistry, Fudan UniversityState Key Laboratory of Porous Materials for Separation and Conversion, Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Key Laboratory of Computational Physical Science, Department of Chemistry, Fudan UniversityState Key Laboratory of Porous Materials for Separation and Conversion, Collaborative Innovation Center of Chemistry for Energy Material, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Key Laboratory of Computational Physical Science, Department of Chemistry, Fudan UniversityAbstract The growth of non-polar GaN on Si substrates is a grand challenge in developing light-emitting diodes, where AlN layers serve as buffers to mitigate the lattice mismatch between GaN and Si in practice. Even though, the primary difficulty aries from the predominant growth of polar AlN(0001) layers. Here we demonstrate that stepped Si(320) can establish a high-quality interface with the semi-polar AlN(22 $$\bar{4}1$$ 4 ¯ 1 ) as identified through machine-learning-based structure predictions that explored millions of potential interface configurations. This interface exhibits atomic-matching with low interface energy, and importantly, features reduced polarization (0.20 C/m2) along with superior interfacial thermal conductance (0.47 GWm-2K-1).https://doi.org/10.1038/s41467-025-59613-5 |
| spellingShingle | Ji-Li Li Ye-Fei Li Zhi-Pan Liu Silicon orientations to grow semi-polar AlN Nature Communications |
| title | Silicon orientations to grow semi-polar AlN |
| title_full | Silicon orientations to grow semi-polar AlN |
| title_fullStr | Silicon orientations to grow semi-polar AlN |
| title_full_unstemmed | Silicon orientations to grow semi-polar AlN |
| title_short | Silicon orientations to grow semi-polar AlN |
| title_sort | silicon orientations to grow semi polar aln |
| url | https://doi.org/10.1038/s41467-025-59613-5 |
| work_keys_str_mv | AT jilili siliconorientationstogrowsemipolaraln AT yefeili siliconorientationstogrowsemipolaraln AT zhipanliu siliconorientationstogrowsemipolaraln |