FePS3-MoS2 p-n junctions for broadband optoelectronics
Abstract Broadband photodetectors and photovoltaic devices are crucial components in various optoelectronic applications, spanning self-powered photodetectors, solar energy harvesting and optical imaging systems, where optical sensitivity and efficient charge carrier generation are paramount. Two di...
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Nature Portfolio
2025-03-01
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| Series: | npj 2D Materials and Applications |
| Online Access: | https://doi.org/10.1038/s41699-025-00541-9 |
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| author | Mei Xian Low Taimur Ahmed Saurabh K. Saini Majid Panahandeh-Fard Joao O. Mendes Anthony S. R. Chesman Chenglong Xu Joel Van Embden Lan Wang Mahesh Kumar Sharath Sriram Madhu Bhaskaran Sumeet Walia |
| author_facet | Mei Xian Low Taimur Ahmed Saurabh K. Saini Majid Panahandeh-Fard Joao O. Mendes Anthony S. R. Chesman Chenglong Xu Joel Van Embden Lan Wang Mahesh Kumar Sharath Sriram Madhu Bhaskaran Sumeet Walia |
| author_sort | Mei Xian Low |
| collection | DOAJ |
| description | Abstract Broadband photodetectors and photovoltaic devices are crucial components in various optoelectronic applications, spanning self-powered photodetectors, solar energy harvesting and optical imaging systems, where optical sensitivity and efficient charge carrier generation are paramount. Two dimensional (2D) materials can be used to form p-n junctions for these applications, without crystal lattice or grain boundary constraints, which are common issues in bulk semiconductors. However, a key challenge lies in developing 2D heterojunctions that can efficiently harvest light across a broad spectrum while maintaining high charge separation. Here, we report heterojunctions of iron phosphorus trisulfide (FePS3) and molybdenum disulphide (MoS2) as the p- and n-type materials, respectively, demonstrating broadband photoresponse and photovoltaic behaviour. The results reveal that the FePS3-MoS2 heterojunctions form a Type-II band alignment, which not only enhances charge separation at the interface but also leads to faster relaxation times as compared to the individual materials. As such, enabling a robust photovoltaic and photoresponse across the visible spectrum. Notably, the heterojunctions exhibit a short-circuit current density of ~0.29 mA/cm² under visible light and outperform similar two-material heterostructures. These heterojunctions also demonstrate potential for translation onto flexible platforms by maintaining a comparable optoelectronic performance. This opens up opportunities for engineering flexible and self-driven optoelectronic devices, which is beneficial for smart wearable technology. |
| format | Article |
| id | doaj-art-e8014eb63bd8449e90a35a48526d4801 |
| institution | DOAJ |
| issn | 2397-7132 |
| language | English |
| publishDate | 2025-03-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | npj 2D Materials and Applications |
| spelling | doaj-art-e8014eb63bd8449e90a35a48526d48012025-08-20T02:56:21ZengNature Portfolionpj 2D Materials and Applications2397-71322025-03-019111010.1038/s41699-025-00541-9FePS3-MoS2 p-n junctions for broadband optoelectronicsMei Xian Low0Taimur Ahmed1Saurabh K. Saini2Majid Panahandeh-Fard3Joao O. Mendes4Anthony S. R. Chesman5Chenglong Xu6Joel Van Embden7Lan Wang8Mahesh Kumar9Sharath Sriram10Madhu Bhaskaran11Sumeet Walia12Integrated Photonics and Applications Centre, School of Engineering, RMIT UniversitySchool of Engineering, RMIT UniversityCSIR-National Physical LaboratorySchool of Engineering, RMIT UniversityCSIRO ManufacturingCSIRO ManufacturingMicroNano Research Facility, RMIT UniversitySchool of Science, RMIT UniversityARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), RMIT NodeSchool of Engineering, RMIT UniversityFunctional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT UniversityFunctional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT UniversitySchool of Engineering, RMIT UniversityAbstract Broadband photodetectors and photovoltaic devices are crucial components in various optoelectronic applications, spanning self-powered photodetectors, solar energy harvesting and optical imaging systems, where optical sensitivity and efficient charge carrier generation are paramount. Two dimensional (2D) materials can be used to form p-n junctions for these applications, without crystal lattice or grain boundary constraints, which are common issues in bulk semiconductors. However, a key challenge lies in developing 2D heterojunctions that can efficiently harvest light across a broad spectrum while maintaining high charge separation. Here, we report heterojunctions of iron phosphorus trisulfide (FePS3) and molybdenum disulphide (MoS2) as the p- and n-type materials, respectively, demonstrating broadband photoresponse and photovoltaic behaviour. The results reveal that the FePS3-MoS2 heterojunctions form a Type-II band alignment, which not only enhances charge separation at the interface but also leads to faster relaxation times as compared to the individual materials. As such, enabling a robust photovoltaic and photoresponse across the visible spectrum. Notably, the heterojunctions exhibit a short-circuit current density of ~0.29 mA/cm² under visible light and outperform similar two-material heterostructures. These heterojunctions also demonstrate potential for translation onto flexible platforms by maintaining a comparable optoelectronic performance. This opens up opportunities for engineering flexible and self-driven optoelectronic devices, which is beneficial for smart wearable technology.https://doi.org/10.1038/s41699-025-00541-9 |
| spellingShingle | Mei Xian Low Taimur Ahmed Saurabh K. Saini Majid Panahandeh-Fard Joao O. Mendes Anthony S. R. Chesman Chenglong Xu Joel Van Embden Lan Wang Mahesh Kumar Sharath Sriram Madhu Bhaskaran Sumeet Walia FePS3-MoS2 p-n junctions for broadband optoelectronics npj 2D Materials and Applications |
| title | FePS3-MoS2 p-n junctions for broadband optoelectronics |
| title_full | FePS3-MoS2 p-n junctions for broadband optoelectronics |
| title_fullStr | FePS3-MoS2 p-n junctions for broadband optoelectronics |
| title_full_unstemmed | FePS3-MoS2 p-n junctions for broadband optoelectronics |
| title_short | FePS3-MoS2 p-n junctions for broadband optoelectronics |
| title_sort | feps3 mos2 p n junctions for broadband optoelectronics |
| url | https://doi.org/10.1038/s41699-025-00541-9 |
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