Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems
Abstract Utilizing memristors to increase the density of crossbar arrays requires reducing dependency on transistors. This paper presents an approach where the current limiting function is integrated within the memristor by inducing an AlOx/TaOx layer, thereby limiting overshoot current during filam...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-02-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.202400282 |
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| author | Sungjoon Kim Hyeonseung Ji Sungjun Kim Woo Young Choi |
| author_facet | Sungjoon Kim Hyeonseung Ji Sungjun Kim Woo Young Choi |
| author_sort | Sungjoon Kim |
| collection | DOAJ |
| description | Abstract Utilizing memristors to increase the density of crossbar arrays requires reducing dependency on transistors. This paper presents an approach where the current limiting function is integrated within the memristor by inducing an AlOx/TaOx layer, thereby limiting overshoot current during filament formation. The reaction between TaOx and Al can be accelerated through annealing, which optimizes the on/off ratio and reduces device‐to‐device variation. Additionally, AlN is inserted to inhibit the movement of oxygen ions to the bottom electrode, improving conductive filament reoxidation. Furthermore, biological synaptic properties are examined using electrical pulse schemes, revealing multibit characteristics of >5‐bit. After the structure optimization, 24 × 24 crossbar arrays are fabricated, allowing 100% of cells to achieve self‐compliance filament formation without hard breakdown. Moreover, the crossbar array demonstrates an on/off ratio of over 4 × 102. Additionally, a multibit‐encoded neuromorphic system is proposed based on the device's multibit capability. The number of synapses can be significantly reduced by grouping input data into a single memristor device. When comparing classification accuracies, 97.14% and 95.54% are observed without and with encoding. The improvements in device structure and encoding method presented in this study enable highly integrated crossbar arrays and efficient neuromorphic systems. |
| format | Article |
| id | doaj-art-e7f0831eacd445e1b3cb3e763f5a45d3 |
| institution | Kabale University |
| issn | 2199-160X |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj-art-e7f0831eacd445e1b3cb3e763f5a45d32025-08-20T03:47:49ZengWiley-VCHAdvanced Electronic Materials2199-160X2025-02-01112n/an/a10.1002/aelm.202400282Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic SystemsSungjoon Kim0Hyeonseung Ji1Sungjun Kim2Woo Young Choi3Department of AI Semiconductor Engineering Korea University Sejong 30019 Republic of KoreaDivision of Electronics and Electrical Engineering Dongguk University Seoul 04620 Republic of KoreaDivision of Electronics and Electrical Engineering Dongguk University Seoul 04620 Republic of KoreaDepartment of Electrical and Computer Engineering and Inter‐university Semiconductor Research Center (ISRC) Seoul National University Seoul 08826 Republic of KoreaAbstract Utilizing memristors to increase the density of crossbar arrays requires reducing dependency on transistors. This paper presents an approach where the current limiting function is integrated within the memristor by inducing an AlOx/TaOx layer, thereby limiting overshoot current during filament formation. The reaction between TaOx and Al can be accelerated through annealing, which optimizes the on/off ratio and reduces device‐to‐device variation. Additionally, AlN is inserted to inhibit the movement of oxygen ions to the bottom electrode, improving conductive filament reoxidation. Furthermore, biological synaptic properties are examined using electrical pulse schemes, revealing multibit characteristics of >5‐bit. After the structure optimization, 24 × 24 crossbar arrays are fabricated, allowing 100% of cells to achieve self‐compliance filament formation without hard breakdown. Moreover, the crossbar array demonstrates an on/off ratio of over 4 × 102. Additionally, a multibit‐encoded neuromorphic system is proposed based on the device's multibit capability. The number of synapses can be significantly reduced by grouping input data into a single memristor device. When comparing classification accuracies, 97.14% and 95.54% are observed without and with encoding. The improvements in device structure and encoding method presented in this study enable highly integrated crossbar arrays and efficient neuromorphic systems.https://doi.org/10.1002/aelm.202400282crossbar arrayneuromorphic systemovershoot suppressed layerresistive switchingself‐compliance |
| spellingShingle | Sungjoon Kim Hyeonseung Ji Sungjun Kim Woo Young Choi Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems Advanced Electronic Materials crossbar array neuromorphic system overshoot suppressed layer resistive switching self‐compliance |
| title | Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems |
| title_full | Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems |
| title_fullStr | Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems |
| title_full_unstemmed | Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems |
| title_short | Enhanced Reliability and Self‐Compliance of Synaptic Arrays for Multibit Encoded Neuromorphic Systems |
| title_sort | enhanced reliability and self compliance of synaptic arrays for multibit encoded neuromorphic systems |
| topic | crossbar array neuromorphic system overshoot suppressed layer resistive switching self‐compliance |
| url | https://doi.org/10.1002/aelm.202400282 |
| work_keys_str_mv | AT sungjoonkim enhancedreliabilityandselfcomplianceofsynapticarraysformultibitencodedneuromorphicsystems AT hyeonseungji enhancedreliabilityandselfcomplianceofsynapticarraysformultibitencodedneuromorphicsystems AT sungjunkim enhancedreliabilityandselfcomplianceofsynapticarraysformultibitencodedneuromorphicsystems AT wooyoungchoi enhancedreliabilityandselfcomplianceofsynapticarraysformultibitencodedneuromorphicsystems |