Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture
Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
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| Online Access: | https://ieeexplore.ieee.org/document/11087563/ |
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| author | Aadil Bashir Dar Adil Meersha Amogh K. M Asif A. Shah Anand Kumar Rai Rupali Verma Utpreksh Patbhaje Jeevesh Kumar Mayank Shrivastava |
| author_facet | Aadil Bashir Dar Adil Meersha Amogh K. M Asif A. Shah Anand Kumar Rai Rupali Verma Utpreksh Patbhaje Jeevesh Kumar Mayank Shrivastava |
| author_sort | Aadil Bashir Dar |
| collection | DOAJ |
| description | Graphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene an attractive candidate for high-frequency and high-speed applications. However, the technology progress is limited by RF performance-killing agents like contact resistance, substrate parasitics, and material-to-device process flow limitations. This work provides a systematic insight into the performance limiters of graphene FETs on SiO2 and SiC substrates, grown via chemical vapor deposition (CVD) and epitaxial methods. Notably, the highest extracted cut-off frequency is 55/20 GHz on the SiC/SiO2 substrate, which reflects the superiority of SiC over SiO2 as a substrate for graphene RF devices. Additionally, the work discusses DC/RF performance degradation issues due to top gate dielectric deposition and demonstrate a unique “Inverted T-Gate” device architecture to mitigate the same. |
| format | Article |
| id | doaj-art-e7b09f0b90bc4e50b07ad37a5c989091 |
| institution | Kabale University |
| issn | 2168-6734 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj-art-e7b09f0b90bc4e50b07ad37a5c9890912025-08-20T03:40:17ZengIEEEIEEE Journal of the Electron Devices Society2168-67342025-01-011393093610.1109/JEDS.2025.359115211087563Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate ArchitectureAadil Bashir Dar0https://orcid.org/0009-0003-0180-5767Adil Meersha1Amogh K. M2Asif A. Shah3https://orcid.org/0009-0005-4372-5428Anand Kumar Rai4https://orcid.org/0009-0009-6534-7586Rupali Verma5https://orcid.org/0000-0001-5629-9070Utpreksh Patbhaje6https://orcid.org/0009-0000-7648-1080Jeevesh Kumar7https://orcid.org/0000-0001-6178-8434Mayank Shrivastava8https://orcid.org/0000-0003-1005-040XDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaDepartment of Electronic Systems Engineering, Indian Institute of Science, Bengaluru, IndiaGraphene has emerged as a promising material for future radio frequency (RF) device applications due to its exceptional carrier mobility, high saturation velocity, and atomically thin structure. These properties enable ultra-fast charge transport and excellent electrostatic control, making graphene an attractive candidate for high-frequency and high-speed applications. However, the technology progress is limited by RF performance-killing agents like contact resistance, substrate parasitics, and material-to-device process flow limitations. This work provides a systematic insight into the performance limiters of graphene FETs on SiO2 and SiC substrates, grown via chemical vapor deposition (CVD) and epitaxial methods. Notably, the highest extracted cut-off frequency is 55/20 GHz on the SiC/SiO2 substrate, which reflects the superiority of SiC over SiO2 as a substrate for graphene RF devices. Additionally, the work discusses DC/RF performance degradation issues due to top gate dielectric deposition and demonstrate a unique “Inverted T-Gate” device architecture to mitigate the same.https://ieeexplore.ieee.org/document/11087563/RF devicesgrapheneS parameterscut-off frequencyCVD graphenesubstrate |
| spellingShingle | Aadil Bashir Dar Adil Meersha Amogh K. M Asif A. Shah Anand Kumar Rai Rupali Verma Utpreksh Patbhaje Jeevesh Kumar Mayank Shrivastava Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture IEEE Journal of the Electron Devices Society RF devices graphene S parameters cut-off frequency CVD graphene substrate |
| title | Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture |
| title_full | Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture |
| title_fullStr | Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture |
| title_full_unstemmed | Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture |
| title_short | Physical Insights Into the Effect of Substrate on Graphene RF Transistor Performance and Demonstration of Novel Inverted T-Gate Architecture |
| title_sort | physical insights into the effect of substrate on graphene rf transistor performance and demonstration of novel inverted t gate architecture |
| topic | RF devices graphene S parameters cut-off frequency CVD graphene substrate |
| url | https://ieeexplore.ieee.org/document/11087563/ |
| work_keys_str_mv | AT aadilbashirdar physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT adilmeersha physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT amoghkm physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT asifashah physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT anandkumarrai physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT rupaliverma physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT utprekshpatbhaje physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT jeeveshkumar physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture AT mayankshrivastava physicalinsightsintotheeffectofsubstrateongraphenerftransistorperformanceanddemonstrationofnovelinvertedtgatearchitecture |