Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration
Convergence of multiple functions in a single device is the main thought behind the development of the current electronic trends. So, the requirement for higher integration in electronic devices has become more important in present days than in the past. Through silicon via (TSV) is the latest inter...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2015-01-01
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| Series: | International Journal of Antennas and Propagation |
| Online Access: | http://dx.doi.org/10.1155/2015/470952 |
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| author | Zhaowen Yan Ting Kang Wei Zhang Jianwei Wang |
| author_facet | Zhaowen Yan Ting Kang Wei Zhang Jianwei Wang |
| author_sort | Zhaowen Yan |
| collection | DOAJ |
| description | Convergence of multiple functions in a single device is the main thought behind the development of the current electronic trends. So, the requirement for higher integration in electronic devices has become more important in present days than in the past. Through silicon via (TSV) is the latest interconnect technology proposed mainly for higher integration and higher frequency. Therefore, cross talk will be an essential issue that needs to be taken into consideration. In this paper, we study the electrical property of a GSSG (S-Signal, G-Ground) TSV structure and propose the accurate lumped model which can be used to predict the TSV performance. Since more dies are used within one chip, the single layer TSV cannot satisfy the requirement. Hence, we propose the multilayer TSV structure and study how the bump radius, bump height, and underfill material affect the TSV transmission performance and coupling issue, so that we can conduct a good TSV design. Furthermore, three multilayer 4 × 4 TSV array models are proposed with different GS distribution to analyze the detailed coupling results. |
| format | Article |
| id | doaj-art-e798d56becf547699e43877e54fdd45f |
| institution | DOAJ |
| issn | 1687-5869 1687-5877 |
| language | English |
| publishDate | 2015-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Antennas and Propagation |
| spelling | doaj-art-e798d56becf547699e43877e54fdd45f2025-08-20T03:21:02ZengWileyInternational Journal of Antennas and Propagation1687-58691687-58772015-01-01201510.1155/2015/470952470952Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D IntegrationZhaowen Yan0Ting Kang1Wei Zhang2Jianwei Wang3School of Electronic and Information Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ChinaSchool of Electronic and Information Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ChinaSchool of Electronic and Information Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ChinaSchool of Electronic and Information Engineering, Beihang University, No. 37 Xueyuan Road, Haidian District, Beijing 100191, ChinaConvergence of multiple functions in a single device is the main thought behind the development of the current electronic trends. So, the requirement for higher integration in electronic devices has become more important in present days than in the past. Through silicon via (TSV) is the latest interconnect technology proposed mainly for higher integration and higher frequency. Therefore, cross talk will be an essential issue that needs to be taken into consideration. In this paper, we study the electrical property of a GSSG (S-Signal, G-Ground) TSV structure and propose the accurate lumped model which can be used to predict the TSV performance. Since more dies are used within one chip, the single layer TSV cannot satisfy the requirement. Hence, we propose the multilayer TSV structure and study how the bump radius, bump height, and underfill material affect the TSV transmission performance and coupling issue, so that we can conduct a good TSV design. Furthermore, three multilayer 4 × 4 TSV array models are proposed with different GS distribution to analyze the detailed coupling results.http://dx.doi.org/10.1155/2015/470952 |
| spellingShingle | Zhaowen Yan Ting Kang Wei Zhang Jianwei Wang Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration International Journal of Antennas and Propagation |
| title | Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration |
| title_full | Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration |
| title_fullStr | Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration |
| title_full_unstemmed | Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration |
| title_short | Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration |
| title_sort | modeling and electromagnetic analysis of multilayer through silicon via interconnect for 3d integration |
| url | http://dx.doi.org/10.1155/2015/470952 |
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