Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives
This article provides a comprehensive review of Silicon Carbide (SiC) based inverters designed for High-Speed (HS) drive applications, which require higher output frequencies to enhance efficiency and power density. The review analyzes approximately 70 recent three-phase SiC inverter designs, catego...
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| Format: | Article |
| Language: | English |
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IEEE
2025-01-01
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| Series: | IEEE Access |
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| Online Access: | https://ieeexplore.ieee.org/document/11037818/ |
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| author | Deepak Upadhyay Saeid Deliri Aleksi Mattsson Pasi Peltoniemi Lassi Aarniovuori |
| author_facet | Deepak Upadhyay Saeid Deliri Aleksi Mattsson Pasi Peltoniemi Lassi Aarniovuori |
| author_sort | Deepak Upadhyay |
| collection | DOAJ |
| description | This article provides a comprehensive review of Silicon Carbide (SiC) based inverters designed for High-Speed (HS) drive applications, which require higher output frequencies to enhance efficiency and power density. The review analyzes approximately 70 recent three-phase SiC inverter designs, categorizing them by topology, specifically two-level, Neutral Point Clamped (NPC), T-type, and Multilevel, and discussing their advantages, limitations, and emerging trends. It also examines key design considerations, including the selection of fundamental and switching frequencies, optimization of DC-link voltage, and thermal management. Furthermore, the paper reviews industrial SiC prototypes, recent advancements in SiC device technologies, and various configurations (discrete, parallel, and module), highlighting the advantages and challenges associated with each approach. The analysis identifies a research gap in the development of high-power inverters (greater than 1 MW) capable of operating above 1 kHz fundamental frequencies. The paper concludes by outlining future research directions aimed at advancing SiC inverter technology for HS drives. |
| format | Article |
| id | doaj-art-e756e4d1686c4b6ca259a677745511ac |
| institution | Kabale University |
| issn | 2169-3536 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Access |
| spelling | doaj-art-e756e4d1686c4b6ca259a677745511ac2025-08-20T03:24:08ZengIEEEIEEE Access2169-35362025-01-011310605510607610.1109/ACCESS.2025.358052111037818Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed DrivesDeepak Upadhyay0https://orcid.org/0000-0002-1815-9584Saeid Deliri1Aleksi Mattsson2Pasi Peltoniemi3Lassi Aarniovuori4https://orcid.org/0000-0001-9082-0413Department of Electrical Engineering, School of Energy Systems, Lappeenranta-Lahti University of Technology, Lappeenranta, FinlandDepartment of Electrical Engineering, School of Energy Systems, Lappeenranta-Lahti University of Technology, Lappeenranta, FinlandDepartment of Electrical Engineering, School of Energy Systems, Lappeenranta-Lahti University of Technology, Lappeenranta, FinlandDepartment of Electrical Engineering, School of Energy Systems, Lappeenranta-Lahti University of Technology, Lappeenranta, FinlandDepartment of Electrical Engineering, School of Energy Systems, Lappeenranta-Lahti University of Technology, Lappeenranta, FinlandThis article provides a comprehensive review of Silicon Carbide (SiC) based inverters designed for High-Speed (HS) drive applications, which require higher output frequencies to enhance efficiency and power density. The review analyzes approximately 70 recent three-phase SiC inverter designs, categorizing them by topology, specifically two-level, Neutral Point Clamped (NPC), T-type, and Multilevel, and discussing their advantages, limitations, and emerging trends. It also examines key design considerations, including the selection of fundamental and switching frequencies, optimization of DC-link voltage, and thermal management. Furthermore, the paper reviews industrial SiC prototypes, recent advancements in SiC device technologies, and various configurations (discrete, parallel, and module), highlighting the advantages and challenges associated with each approach. The analysis identifies a research gap in the development of high-power inverters (greater than 1 MW) capable of operating above 1 kHz fundamental frequencies. The paper concludes by outlining future research directions aimed at advancing SiC inverter technology for HS drives.https://ieeexplore.ieee.org/document/11037818/Inverter designhigh-speed driveswide band gap devicesSiC MOSFETshigh fundamental frequencyhigh power applications |
| spellingShingle | Deepak Upadhyay Saeid Deliri Aleksi Mattsson Pasi Peltoniemi Lassi Aarniovuori Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives IEEE Access Inverter design high-speed drives wide band gap devices SiC MOSFETs high fundamental frequency high power applications |
| title | Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives |
| title_full | Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives |
| title_fullStr | Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives |
| title_full_unstemmed | Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives |
| title_short | Review on Silicon Carbide-Based High-Fundamental Frequency Inverters for High-Speed Drives |
| title_sort | review on silicon carbide based high fundamental frequency inverters for high speed drives |
| topic | Inverter design high-speed drives wide band gap devices SiC MOSFETs high fundamental frequency high power applications |
| url | https://ieeexplore.ieee.org/document/11037818/ |
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