Investigation of Deep Trench Process for Trench-gate IGBT
Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2013-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2013.02.004 |
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