Investigation of Deep Trench Process for Trench-gate IGBT
Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2...
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| Format: | Article |
| Language: | zho |
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Editorial Office of Control and Information Technology
2013-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2013.02.004 |
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| _version_ | 1849224915805274112 |
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| author | LUO Haihui HUANG Jianwei DEVINY Ian LIU Guoyou |
| author_facet | LUO Haihui HUANG Jianwei DEVINY Ian LIU Guoyou |
| author_sort | LUO Haihui |
| collection | DOAJ |
| description | Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2 and SF6. A non-uniformity of <5% and an etch rate of 800 nm/min could be got for the trench plasma etch after a systematic optimization of process parameters such as gas flow, air pressure, electrode gap and RF power etc. The trench profile is further improved after additional processing including CF4/Ar etching and sacrificial oxidizing. |
| format | Article |
| id | doaj-art-e7199836021a4573b51b2589c887b71d |
| institution | Kabale University |
| issn | 2096-5427 |
| language | zho |
| publishDate | 2013-01-01 |
| publisher | Editorial Office of Control and Information Technology |
| record_format | Article |
| series | Kongzhi Yu Xinxi Jishu |
| spelling | doaj-art-e7199836021a4573b51b2589c887b71d2025-08-25T06:51:26ZzhoEditorial Office of Control and Information TechnologyKongzhi Yu Xinxi Jishu2096-54272013-01-013081282333539Investigation of Deep Trench Process for Trench-gate IGBTLUO HaihuiHUANG JianweiDEVINY IanLIU GuoyouDeep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2 and SF6. A non-uniformity of <5% and an etch rate of 800 nm/min could be got for the trench plasma etch after a systematic optimization of process parameters such as gas flow, air pressure, electrode gap and RF power etc. The trench profile is further improved after additional processing including CF4/Ar etching and sacrificial oxidizing.http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2013.02.004trench-gate IGBTplasma etchCl2trench profile |
| spellingShingle | LUO Haihui HUANG Jianwei DEVINY Ian LIU Guoyou Investigation of Deep Trench Process for Trench-gate IGBT Kongzhi Yu Xinxi Jishu trench-gate IGBT plasma etch Cl2 trench profile |
| title | Investigation of Deep Trench Process for Trench-gate IGBT |
| title_full | Investigation of Deep Trench Process for Trench-gate IGBT |
| title_fullStr | Investigation of Deep Trench Process for Trench-gate IGBT |
| title_full_unstemmed | Investigation of Deep Trench Process for Trench-gate IGBT |
| title_short | Investigation of Deep Trench Process for Trench-gate IGBT |
| title_sort | investigation of deep trench process for trench gate igbt |
| topic | trench-gate IGBT plasma etch Cl2 trench profile |
| url | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2013.02.004 |
| work_keys_str_mv | AT luohaihui investigationofdeeptrenchprocessfortrenchgateigbt AT huangjianwei investigationofdeeptrenchprocessfortrenchgateigbt AT devinyian investigationofdeeptrenchprocessfortrenchgateigbt AT liuguoyou investigationofdeeptrenchprocessfortrenchgateigbt |