Investigation of Deep Trench Process for Trench-gate IGBT
Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2013-01-01
|
| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2013.02.004 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | Deep trench plasma etch process which is suitable for trench-gate IGBT has been developed based on Lam 4420 reactive ion etching (RIE) tool and Cl2. An undercut-free 6 μm-deep trench with round bottom corners and around 3°sidewall slope is obtained by carefully adjusting additive gases like HBr, O2 and SF6. A non-uniformity of <5% and an etch rate of 800 nm/min could be got for the trench plasma etch after a systematic optimization of process parameters such as gas flow, air pressure, electrode gap and RF power etc. The trench profile is further improved after additional processing including CF4/Ar etching and sacrificial oxidizing. |
|---|---|
| ISSN: | 2096-5427 |