Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis
In this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation process in a pure oxygen atmosphere to achieve a Z...
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V.N. Karazin Kharkiv National University Publishing
2025-06-01
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| Series: | East European Journal of Physics |
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| Online Access: | https://periodicals.karazin.ua/eejp/article/view/25168 |
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| author | Fakhriddin T. Yusupov Tokhirbek I. Rakhmonov Dadakhon Sh. Khidirov Shakhnoza Sh. Akhmadjanova Javokhirbek A. Akhmadaliyev |
| author_facet | Fakhriddin T. Yusupov Tokhirbek I. Rakhmonov Dadakhon Sh. Khidirov Shakhnoza Sh. Akhmadjanova Javokhirbek A. Akhmadaliyev |
| author_sort | Fakhriddin T. Yusupov |
| collection | DOAJ |
| description | In this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation process in a pure oxygen atmosphere to achieve a ZnO-based oxide layer. Post-deposition annealing was conducted at various temperatures (400°C‑550°C) to enhance crystallinity and phase composition. X-ray diffraction (XRD) analysis confirmed the formation of a highly crystalline Zn2SnO4 phase, with the optimal structure obtained at 550°C. Optical characterization revealed a temperature-dependent bandgap narrowing effect, significantly influencing transmittance and reflectance spectra. Electrical properties were assessed via Hall effect and current-voltage (I-V) measurements, indicating an increase in carrier mobility and conductivity at higher annealing temperatures. The charge transport mechanism in Ni-(Zn,Sn)O-pSi-Ni heterostructures was analyzed using the space-charge-limited current (SCLC) model, revealing that carrier injection is the dominant transport process. The results demonstrate that (Zn,Sn)O thin films exhibit superior optoelectronic properties, making them promising candidates for photovoltaic and optoelectronic applications. |
| format | Article |
| id | doaj-art-e6dfe5a0ef724d41b16beee02eed1031 |
| institution | Kabale University |
| issn | 2312-4334 2312-4539 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | V.N. Karazin Kharkiv National University Publishing |
| record_format | Article |
| series | East European Journal of Physics |
| spelling | doaj-art-e6dfe5a0ef724d41b16beee02eed10312025-08-20T03:41:12ZengV.N. Karazin Kharkiv National University PublishingEast European Journal of Physics2312-43342312-45392025-06-01233534110.26565/2312-4334-2025-2-4225168Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport AnalysisFakhriddin T. Yusupov0Tokhirbek I. Rakhmonov1Dadakhon Sh. Khidirov2Shakhnoza Sh. Akhmadjanova3Javokhirbek A. Akhmadaliyev4Fergana State Technical University, Fergana, UzbekistanFergana State Technical University, Fergana, UzbekistanFergana State Technical University, Fergana, UzbekistanFergana State Technical University, Fergana, UzbekistanFergana State Technical University, Fergana, UzbekistanIn this study, (Zn,Sn)O thin films were synthesized and characterized for potential application as buffer layers in photovoltaic devices. The films were deposited using thermal evaporation in a high-vacuum chamber, followed by a controlled oxidation process in a pure oxygen atmosphere to achieve a ZnO-based oxide layer. Post-deposition annealing was conducted at various temperatures (400°C‑550°C) to enhance crystallinity and phase composition. X-ray diffraction (XRD) analysis confirmed the formation of a highly crystalline Zn2SnO4 phase, with the optimal structure obtained at 550°C. Optical characterization revealed a temperature-dependent bandgap narrowing effect, significantly influencing transmittance and reflectance spectra. Electrical properties were assessed via Hall effect and current-voltage (I-V) measurements, indicating an increase in carrier mobility and conductivity at higher annealing temperatures. The charge transport mechanism in Ni-(Zn,Sn)O-pSi-Ni heterostructures was analyzed using the space-charge-limited current (SCLC) model, revealing that carrier injection is the dominant transport process. The results demonstrate that (Zn,Sn)O thin films exhibit superior optoelectronic properties, making them promising candidates for photovoltaic and optoelectronic applications.https://periodicals.karazin.ua/eejp/article/view/25168(zn,sn)o thin filmsphotovoltaic applicationsthermal evaporationx-ray diffractionoptical propertieselectrical transporthall effectcharge carrier mobilityheterostructures |
| spellingShingle | Fakhriddin T. Yusupov Tokhirbek I. Rakhmonov Dadakhon Sh. Khidirov Shakhnoza Sh. Akhmadjanova Javokhirbek A. Akhmadaliyev Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis East European Journal of Physics (zn,sn)o thin films photovoltaic applications thermal evaporation x-ray diffraction optical properties electrical transport hall effect charge carrier mobility heterostructures |
| title | Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis |
| title_full | Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis |
| title_fullStr | Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis |
| title_full_unstemmed | Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis |
| title_short | Zn₂SnO₄ Thin Films for Photovoltaics: Structural Optimization and Charge Transport Analysis |
| title_sort | zn₂sno₄ thin films for photovoltaics structural optimization and charge transport analysis |
| topic | (zn,sn)o thin films photovoltaic applications thermal evaporation x-ray diffraction optical properties electrical transport hall effect charge carrier mobility heterostructures |
| url | https://periodicals.karazin.ua/eejp/article/view/25168 |
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