Amorphization dependent recrystallisation of Sb2Te3
Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser hea...
Saved in:
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
IOP Publishing
2025-01-01
|
Series: | JPhys Materials |
Subjects: | |
Online Access: | https://doi.org/10.1088/2515-7639/adab23 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
_version_ | 1823858373715558400 |
---|---|
author | Nur Qalishah Adanan Simon Wredh Joel K W Yang Robert E Simpson |
author_facet | Nur Qalishah Adanan Simon Wredh Joel K W Yang Robert E Simpson |
author_sort | Nur Qalishah Adanan |
collection | DOAJ |
description | Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser heating, and that the recrystallisation temperature strongly depends on the local atomic configurations in the amorphous structure. Indeed, when Sb _2 Te _3 is amorphized with higher laser powers, its subsequent recrystallisation temperature increases by up to 23 °C yet, and counterintuitively the recrystallisation activation energy decreases. This leads to shorter minimum recrystallisation times. This effect is important because it provides a means to switch PCM devices at higher rates through a catalyst-like effect. The optical properties of Sb _2 Te _3 can be gradually tuned by the level of crystallographic disorder. The amorphousness of PCMs provides a further degree-of-freedom to achieve multi-level programmability and tune the switching energy of devices. |
format | Article |
id | doaj-art-e6d17db5ce8e4f39a042df83ee526979 |
institution | Kabale University |
issn | 2515-7639 |
language | English |
publishDate | 2025-01-01 |
publisher | IOP Publishing |
record_format | Article |
series | JPhys Materials |
spelling | doaj-art-e6d17db5ce8e4f39a042df83ee5269792025-02-11T11:58:52ZengIOP PublishingJPhys Materials2515-76392025-01-018202500310.1088/2515-7639/adab23Amorphization dependent recrystallisation of Sb2Te3Nur Qalishah Adanan0https://orcid.org/0000-0003-1320-8962Simon Wredh1https://orcid.org/0000-0003-2779-0164Joel K W Yang2https://orcid.org/0000-0003-3301-1040Robert E Simpson3https://orcid.org/0000-0002-3499-4950Engineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeSchool of Engineering, University of Birmingham Edgbaston , B15 2TT Birmingham, United KingdomUnderstanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser heating, and that the recrystallisation temperature strongly depends on the local atomic configurations in the amorphous structure. Indeed, when Sb _2 Te _3 is amorphized with higher laser powers, its subsequent recrystallisation temperature increases by up to 23 °C yet, and counterintuitively the recrystallisation activation energy decreases. This leads to shorter minimum recrystallisation times. This effect is important because it provides a means to switch PCM devices at higher rates through a catalyst-like effect. The optical properties of Sb _2 Te _3 can be gradually tuned by the level of crystallographic disorder. The amorphousness of PCMs provides a further degree-of-freedom to achieve multi-level programmability and tune the switching energy of devices.https://doi.org/10.1088/2515-7639/adab23phase change materialsSb2Te3amorphizationcrystallisation kineticsmulti-level |
spellingShingle | Nur Qalishah Adanan Simon Wredh Joel K W Yang Robert E Simpson Amorphization dependent recrystallisation of Sb2Te3 JPhys Materials phase change materials Sb2Te3 amorphization crystallisation kinetics multi-level |
title | Amorphization dependent recrystallisation of Sb2Te3 |
title_full | Amorphization dependent recrystallisation of Sb2Te3 |
title_fullStr | Amorphization dependent recrystallisation of Sb2Te3 |
title_full_unstemmed | Amorphization dependent recrystallisation of Sb2Te3 |
title_short | Amorphization dependent recrystallisation of Sb2Te3 |
title_sort | amorphization dependent recrystallisation of sb2te3 |
topic | phase change materials Sb2Te3 amorphization crystallisation kinetics multi-level |
url | https://doi.org/10.1088/2515-7639/adab23 |
work_keys_str_mv | AT nurqalishahadanan amorphizationdependentrecrystallisationofsb2te3 AT simonwredh amorphizationdependentrecrystallisationofsb2te3 AT joelkwyang amorphizationdependentrecrystallisationofsb2te3 AT robertesimpson amorphizationdependentrecrystallisationofsb2te3 |