Amorphization dependent recrystallisation of Sb2Te3

Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser hea...

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Main Authors: Nur Qalishah Adanan, Simon Wredh, Joel K W Yang, Robert E Simpson
Format: Article
Language:English
Published: IOP Publishing 2025-01-01
Series:JPhys Materials
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Online Access:https://doi.org/10.1088/2515-7639/adab23
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author Nur Qalishah Adanan
Simon Wredh
Joel K W Yang
Robert E Simpson
author_facet Nur Qalishah Adanan
Simon Wredh
Joel K W Yang
Robert E Simpson
author_sort Nur Qalishah Adanan
collection DOAJ
description Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser heating, and that the recrystallisation temperature strongly depends on the local atomic configurations in the amorphous structure. Indeed, when Sb _2 Te _3 is amorphized with higher laser powers, its subsequent recrystallisation temperature increases by up to 23 °C yet, and counterintuitively the recrystallisation activation energy decreases. This leads to shorter minimum recrystallisation times. This effect is important because it provides a means to switch PCM devices at higher rates through a catalyst-like effect. The optical properties of Sb _2 Te _3 can be gradually tuned by the level of crystallographic disorder. The amorphousness of PCMs provides a further degree-of-freedom to achieve multi-level programmability and tune the switching energy of devices.
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institution Kabale University
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spelling doaj-art-e6d17db5ce8e4f39a042df83ee5269792025-02-11T11:58:52ZengIOP PublishingJPhys Materials2515-76392025-01-018202500310.1088/2515-7639/adab23Amorphization dependent recrystallisation of Sb2Te3Nur Qalishah Adanan0https://orcid.org/0000-0003-1320-8962Simon Wredh1https://orcid.org/0000-0003-2779-0164Joel K W Yang2https://orcid.org/0000-0003-3301-1040Robert E Simpson3https://orcid.org/0000-0002-3499-4950Engineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeEngineering Product Development, Singapore University of Technology and Design , Singapore, 487372, SingaporeSchool of Engineering, University of Birmingham Edgbaston , B15 2TT Birmingham, United KingdomUnderstanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser heating, and that the recrystallisation temperature strongly depends on the local atomic configurations in the amorphous structure. Indeed, when Sb _2 Te _3 is amorphized with higher laser powers, its subsequent recrystallisation temperature increases by up to 23 °C yet, and counterintuitively the recrystallisation activation energy decreases. This leads to shorter minimum recrystallisation times. This effect is important because it provides a means to switch PCM devices at higher rates through a catalyst-like effect. The optical properties of Sb _2 Te _3 can be gradually tuned by the level of crystallographic disorder. The amorphousness of PCMs provides a further degree-of-freedom to achieve multi-level programmability and tune the switching energy of devices.https://doi.org/10.1088/2515-7639/adab23phase change materialsSb2Te3amorphizationcrystallisation kineticsmulti-level
spellingShingle Nur Qalishah Adanan
Simon Wredh
Joel K W Yang
Robert E Simpson
Amorphization dependent recrystallisation of Sb2Te3
JPhys Materials
phase change materials
Sb2Te3
amorphization
crystallisation kinetics
multi-level
title Amorphization dependent recrystallisation of Sb2Te3
title_full Amorphization dependent recrystallisation of Sb2Te3
title_fullStr Amorphization dependent recrystallisation of Sb2Te3
title_full_unstemmed Amorphization dependent recrystallisation of Sb2Te3
title_short Amorphization dependent recrystallisation of Sb2Te3
title_sort amorphization dependent recrystallisation of sb2te3
topic phase change materials
Sb2Te3
amorphization
crystallisation kinetics
multi-level
url https://doi.org/10.1088/2515-7639/adab23
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AT simonwredh amorphizationdependentrecrystallisationofsb2te3
AT joelkwyang amorphizationdependentrecrystallisationofsb2te3
AT robertesimpson amorphizationdependentrecrystallisationofsb2te3