Amorphization dependent recrystallisation of Sb2Te3
Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser hea...
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
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| Series: | JPhys Materials |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2515-7639/adab23 |
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| Summary: | Understanding state-dependent crystallisation kinetics is important for the modelling and design of phase change material (PCM)—based devices, such as multi-level switches. We show how the level of amorphousness (disorder) of antimony-telluride (Sb _2 Te _3 ) can be controlled using pulsed laser heating, and that the recrystallisation temperature strongly depends on the local atomic configurations in the amorphous structure. Indeed, when Sb _2 Te _3 is amorphized with higher laser powers, its subsequent recrystallisation temperature increases by up to 23 °C yet, and counterintuitively the recrystallisation activation energy decreases. This leads to shorter minimum recrystallisation times. This effect is important because it provides a means to switch PCM devices at higher rates through a catalyst-like effect. The optical properties of Sb _2 Te _3 can be gradually tuned by the level of crystallographic disorder. The amorphousness of PCMs provides a further degree-of-freedom to achieve multi-level programmability and tune the switching energy of devices. |
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| ISSN: | 2515-7639 |