Simulation Calculation and Analysis of Electronic Structure and Electrical Properties of Metal-Doped SnO2
SnO2 is an almost insulated semiconductor material, which increases the contact resistance of the AgSnO2 electrical contact material. Therefore, by improving the electrical performance of SnO2, the electrical properties of the AgSnO2 can be optimized. The first principle method based on density func...
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| Main Authors: | Jing-Qin Wang, Hui-Ling Kang, Ying Zhang |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2018-01-01
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| Series: | Advances in Materials Science and Engineering |
| Online Access: | http://dx.doi.org/10.1155/2018/9086195 |
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