Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta
In the sputtering process, the cascade of collisions in the target surface plays a crucial role, as it determines the emission mechanics of the sputtered atoms. This phenomenon is typically described for targets composed of a single elemental type. However, introducing a second element with a differ...
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/adfad4 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849229415287881728 |
|---|---|
| author | J Cruz M Martínez-Fuentes R Giffard S Muhl R Sanginés R Machorro E Chávez |
| author_facet | J Cruz M Martínez-Fuentes R Giffard S Muhl R Sanginés R Machorro E Chávez |
| author_sort | J Cruz |
| collection | DOAJ |
| description | In the sputtering process, the cascade of collisions in the target surface plays a crucial role, as it determines the emission mechanics of the sputtered atoms. This phenomenon is typically described for targets composed of a single elemental type. However, introducing a second element with a different atomic mass can alter the collision cascade. In 1992, S. Berg et al introduced a method to enhance the number of sputtered atoms from doped targets, a phenomenon known as Sputtering Yield Amplification (SYA). However, there seems to be a limit to the effective concentration of dopant atoms, and the reasons why certain dopants can promote or fail to produce SYA remain unclear. In this study, we investigated the influence of gas pressure on SYA of magnetron sputtering of a silicon target doped with molybdenum, tantalum, or copper, focusing on gas-phase collisions between the sputtered dopant atoms and the working gas atoms. Film thickness and total atomic deposition on the substrate were quantified using profilometry and Rutherford Backscattering Spectrometry. Optical Emission Spectroscopy (OES) was employed to monitor the emission intensities of neutral and ionized species in the plasma. Additionally, the SIMTRA code was used to model the spatial distribution of redeposited dopant atoms on the target surface. The results demonstrate that SYA was consistently observed across all tested pressures and dopant elements, indicating a significant increase in the sputtering yield under various experimental conditions. |
| format | Article |
| id | doaj-art-e64cdc639f0e47b98833ae5eec9d1932 |
| institution | Kabale University |
| issn | 2053-1591 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj-art-e64cdc639f0e47b98833ae5eec9d19322025-08-22T04:20:46ZengIOP PublishingMaterials Research Express2053-15912025-01-0112808640110.1088/2053-1591/adfad4Sputtering yield amplification of Si through the addition of Cu, Mo, or TaJ Cruz0https://orcid.org/0000-0002-6478-0056M Martínez-Fuentes1https://orcid.org/0000-0002-6943-0717R Giffard2S Muhl3https://orcid.org/0000-0001-7185-0537R Sanginés4https://orcid.org/0000-0003-2695-0955R Machorro5E Chávez6Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México , Ciudad de México, Apartado Postal 70-360, MexicoInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México , Ciudad de México, Apartado Postal 70-360, MexicoUniversidad de Guadalajara . Blvd. Marcelino García Barragán 1421, Col Olímpica, Guadalajara, Jalisco, C P 44430, MexicoInstituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México , Ciudad de México, Apartado Postal 70-360, MexicoSECIHTI, Centro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México . Km. 107, carretera Ensenada-Tijuana, C P 22860 Ensenada, B C, MexicoCentro de Nanociencias y Nanotecnología, Universidad Nacional Autónoma de México . Km. 107, carretera Ensenada-Tijuana, C P 22860 Ensenada, B C, MexicoInstituto de Física. Universidad Nacional Autónoma de México , Ciudad de México, Apartado Postal 20-364, México, D F 01000, MexicoIn the sputtering process, the cascade of collisions in the target surface plays a crucial role, as it determines the emission mechanics of the sputtered atoms. This phenomenon is typically described for targets composed of a single elemental type. However, introducing a second element with a different atomic mass can alter the collision cascade. In 1992, S. Berg et al introduced a method to enhance the number of sputtered atoms from doped targets, a phenomenon known as Sputtering Yield Amplification (SYA). However, there seems to be a limit to the effective concentration of dopant atoms, and the reasons why certain dopants can promote or fail to produce SYA remain unclear. In this study, we investigated the influence of gas pressure on SYA of magnetron sputtering of a silicon target doped with molybdenum, tantalum, or copper, focusing on gas-phase collisions between the sputtered dopant atoms and the working gas atoms. Film thickness and total atomic deposition on the substrate were quantified using profilometry and Rutherford Backscattering Spectrometry. Optical Emission Spectroscopy (OES) was employed to monitor the emission intensities of neutral and ionized species in the plasma. Additionally, the SIMTRA code was used to model the spatial distribution of redeposited dopant atoms on the target surface. The results demonstrate that SYA was consistently observed across all tested pressures and dopant elements, indicating a significant increase in the sputtering yield under various experimental conditions.https://doi.org/10.1088/2053-1591/adfad4SYAsputtering yield amplificationSi dopedmolybdenumcoppertantalum |
| spellingShingle | J Cruz M Martínez-Fuentes R Giffard S Muhl R Sanginés R Machorro E Chávez Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta Materials Research Express SYA sputtering yield amplification Si doped molybdenum copper tantalum |
| title | Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta |
| title_full | Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta |
| title_fullStr | Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta |
| title_full_unstemmed | Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta |
| title_short | Sputtering yield amplification of Si through the addition of Cu, Mo, or Ta |
| title_sort | sputtering yield amplification of si through the addition of cu mo or ta |
| topic | SYA sputtering yield amplification Si doped molybdenum copper tantalum |
| url | https://doi.org/10.1088/2053-1591/adfad4 |
| work_keys_str_mv | AT jcruz sputteringyieldamplificationofsithroughtheadditionofcumoorta AT mmartinezfuentes sputteringyieldamplificationofsithroughtheadditionofcumoorta AT rgiffard sputteringyieldamplificationofsithroughtheadditionofcumoorta AT smuhl sputteringyieldamplificationofsithroughtheadditionofcumoorta AT rsangines sputteringyieldamplificationofsithroughtheadditionofcumoorta AT rmachorro sputteringyieldamplificationofsithroughtheadditionofcumoorta AT echavez sputteringyieldamplificationofsithroughtheadditionofcumoorta |