Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste

The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical str...

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Main Authors: Shengqian Zhang, Yongsheng Ren, Xingwei Yang, Wenhui Ma, Hui Chen, Guoqiang Lv, Yun Lei, Yi Zeng, Zhengxing Wang, Bingxi Yu
Format: Article
Language:English
Published: Elsevier 2025-01-01
Series:Journal of Materials Research and Technology
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Online Access:http://www.sciencedirect.com/science/article/pii/S2238785424030424
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author Shengqian Zhang
Yongsheng Ren
Xingwei Yang
Wenhui Ma
Hui Chen
Guoqiang Lv
Yun Lei
Yi Zeng
Zhengxing Wang
Bingxi Yu
author_facet Shengqian Zhang
Yongsheng Ren
Xingwei Yang
Wenhui Ma
Hui Chen
Guoqiang Lv
Yun Lei
Yi Zeng
Zhengxing Wang
Bingxi Yu
author_sort Shengqian Zhang
collection DOAJ
description The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical structure, and properties of SiC crystals have also become research hotspots in industry and academia sectors. With the concept of carbon peak and carbon neutrality, the photovoltaic industry has witnessed rapid development. In the process of silicon wafer production, nearly half of the crystalline silicon is lost in the form of silicon powder into silicon cutting waste (SCW), which results in a great waste of resources and severe environmental pollution, and therefore the use of SCW for the preparation of SiC materials has received great attention in recent years. This paper highlights the principles and methods of SiC growth, crystal structure and properties, and discusses the application of SiC prepared from SCW.
format Article
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institution Kabale University
issn 2238-7854
language English
publishDate 2025-01-01
publisher Elsevier
record_format Article
series Journal of Materials Research and Technology
spelling doaj-art-e642f0b5732d4dabb0880bd387fc40612025-01-19T06:25:55ZengElsevierJournal of Materials Research and Technology2238-78542025-01-013425932608Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting wasteShengqian Zhang0Yongsheng Ren1Xingwei Yang2Wenhui Ma3Hui Chen4Guoqiang Lv5Yun Lei6Yi Zeng7Zhengxing Wang8Bingxi Yu9Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan; Corresponding author. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, China; Corresponding author. Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China.School of Engineering, Yunnan University, Kunming, 650500, China; Corresponding author. School of Engineering, Yunnan University, Kunming, 650500, China.Department of Materials Engineering, The University of Tokyo, Tokyo, 113-8656, Japan; Institute for Nonferrous Metal Research, Zhejiang Huayou Cobalt Co, Quzhou, 324012, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaFaculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, 650093, China; National Engineering Research Center of Vacuum Metallurgy, Kunming University of Science and Technology, Kunming, 650093, ChinaThe third-generation semiconductor silicon carbide (SiC) has attracted widespread attention due to its excellent properties, such as high thermal conductivity, large bandgap, high breakdown field strength, and high saturation electronic drift rate, etc. Consequently, the growth process, physical structure, and properties of SiC crystals have also become research hotspots in industry and academia sectors. With the concept of carbon peak and carbon neutrality, the photovoltaic industry has witnessed rapid development. In the process of silicon wafer production, nearly half of the crystalline silicon is lost in the form of silicon powder into silicon cutting waste (SCW), which results in a great waste of resources and severe environmental pollution, and therefore the use of SCW for the preparation of SiC materials has received great attention in recent years. This paper highlights the principles and methods of SiC growth, crystal structure and properties, and discusses the application of SiC prepared from SCW.http://www.sciencedirect.com/science/article/pii/S2238785424030424Silicon carbideGrowth principles and methodsCrystal structurePropertiesSilicon cutting waste
spellingShingle Shengqian Zhang
Yongsheng Ren
Xingwei Yang
Wenhui Ma
Hui Chen
Guoqiang Lv
Yun Lei
Yi Zeng
Zhengxing Wang
Bingxi Yu
Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
Journal of Materials Research and Technology
Silicon carbide
Growth principles and methods
Crystal structure
Properties
Silicon cutting waste
title Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
title_full Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
title_fullStr Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
title_full_unstemmed Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
title_short Crystal growth principles, methods, properties of silicon carbide and its new process prepared from silicon cutting waste
title_sort crystal growth principles methods properties of silicon carbide and its new process prepared from silicon cutting waste
topic Silicon carbide
Growth principles and methods
Crystal structure
Properties
Silicon cutting waste
url http://www.sciencedirect.com/science/article/pii/S2238785424030424
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