Application of SiC Device in Grid-connected Photovoltaic Inverter
As the third generation of semiconductor materials, Silicon Cabide(SiC) has more obvious advantages than the first and second generation of semiconductor materials, such as forbidden band width, breakdown voltage, electron saturation velocity, thermal conductivity, etc. In order to study the applica...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
Editorial Office of Control and Information Technology
2016-01-01
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| Series: | Kongzhi Yu Xinxi Jishu |
| Subjects: | |
| Online Access: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2095-3631.2016.05.006 |
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| Summary: | As the third generation of semiconductor materials, Silicon Cabide(SiC) has more obvious advantages than the first and second generation of semiconductor materials, such as forbidden band width, breakdown voltage, electron saturation velocity, thermal conductivity, etc. In order to study the application advantages of SiC diodes and hybrid IGBT modules in photovoltaic inverter, it analyzed the working characteristics and carried out experiments on switching loss of SiC diode and transferring efficiency of grid-connected photovoltaic inverter. Experimental results show that switching loss of the SiC diode is much lower than that of the Silicon diode, which lead to big reduction of hybrid module recovery energy. Application of hybrid module in grid-connect photovoltaic inverter circuit can effectively improve its efficiency. |
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| ISSN: | 2096-5427 |