N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy
N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency...
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| Format: | Article |
| Language: | English |
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Wiley
1998-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1998/48934 |
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| _version_ | 1850167895635525632 |
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| author | H. C. Chen |
| author_facet | H. C. Chen |
| author_sort | H. C. Chen |
| collection | DOAJ |
| description | N-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of
potential barrier lowering resulted from the forward biased pn junction is demonstrated in a
AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a
high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is
operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively.
A lasing threshold current density, front slope efficiency, and external differential
quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%,
respectively. The peak emission wavelength is centered at about 980nm. |
| format | Article |
| id | doaj-art-e5e89fa43cb240b0a69d9bdcf67884e7 |
| institution | OA Journals |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 1998-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-e5e89fa43cb240b0a69d9bdcf67884e72025-08-20T02:21:06ZengWileyActive and Passive Electronic Components0882-75161563-50311998-01-01212737810.1155/1998/48934N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam EpitaxyH. C. Chen0Department of Electrical Engineering, Far-East Junior College of Technology and Commerce, Tainan 744, TaiwanN-channel lnGaAs quantum well lasing thyristors (QWLT) based on regenerative loop of potential barrier lowering resulted from the forward biased pn junction is demonstrated in a AlGaAs/GaAs double heterostructure. Excellent electrical switching characteristics with a high voltage control efficiency ηv(=Vs/VH) of 6.7 have been obtained when the device is operated in the dark. Typical OFF- and ON-state resistances are 150KΩ and 10Ω respectively. A lasing threshold current density, front slope efficiency, and external differential quantum efficiency measured in as-cleaved device are 183A/cm2, 0.4mW/mA, and 31%, respectively. The peak emission wavelength is centered at about 980nm.http://dx.doi.org/10.1155/1998/48934 |
| spellingShingle | H. C. Chen N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy Active and Passive Electronic Components |
| title | N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy |
| title_full | N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy |
| title_fullStr | N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy |
| title_full_unstemmed | N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy |
| title_short | N-Channel InGaAs Quantum Well Lasing Thyristor (QWLT) Prepared by Molecular Beam Epitaxy |
| title_sort | n channel ingaas quantum well lasing thyristor qwlt prepared by molecular beam epitaxy |
| url | http://dx.doi.org/10.1155/1998/48934 |
| work_keys_str_mv | AT hcchen nchannelingaasquantumwelllasingthyristorqwltpreparedbymolecularbeamepitaxy |