Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process
We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley
2012-01-01
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| Series: | International Journal of Photoenergy |
| Online Access: | http://dx.doi.org/10.1155/2012/395235 |
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| author | Ying-Yang Teng Jyh-Chen Chen Chung-Wei Lu Cheng-Chuan Huang Wan-Ting Wun Hsueh-I Chen Chi-Yung Chen Wen-Chieh Lan |
| author_facet | Ying-Yang Teng Jyh-Chen Chen Chung-Wei Lu Cheng-Chuan Huang Wan-Ting Wun Hsueh-I Chen Chi-Yung Chen Wen-Chieh Lan |
| author_sort | Ying-Yang Teng |
| collection | DOAJ |
| description | We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex. |
| format | Article |
| id | doaj-art-e5b9ef74875a4f57b168347bbd188cbc |
| institution | OA Journals |
| issn | 1110-662X 1687-529X |
| language | English |
| publishDate | 2012-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | International Journal of Photoenergy |
| spelling | doaj-art-e5b9ef74875a4f57b168347bbd188cbc2025-08-20T02:21:20ZengWileyInternational Journal of Photoenergy1110-662X1687-529X2012-01-01201210.1155/2012/395235395235Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth ProcessYing-Yang Teng0Jyh-Chen Chen1Chung-Wei Lu2Cheng-Chuan Huang3Wan-Ting Wun4Hsueh-I Chen5Chi-Yung Chen6Wen-Chieh Lan7Chung Shan Institute of Science and Technology (CSIST), No. 481, Sec. chia an, Zhongzheng Rd., Longtan, Taoyuan County 32546, TaiwanDepartment of Mechanical Engineering, National Central University, No. 300, Jhongda Rd., Jhongli City, Taoyuan County 32001, TaiwanJen-Teh College, No. 79-9, Sha-Luen Hu, Hou-Loung, Miaoli County 35664, TaiwanDepartment of Mechanical Engineering, National Central University, No. 300, Jhongda Rd., Jhongli City, Taoyuan County 32001, TaiwanDepartment of Mechanical Engineering, National Central University, No. 300, Jhongda Rd., Jhongli City, Taoyuan County 32001, TaiwanDepartment of Mechanical Engineering, National Central University, No. 300, Jhongda Rd., Jhongli City, Taoyuan County 32001, TaiwanSino-American Silicon Products Inc., No. 8. Industrial East Road 2, Hsinchu Science Park, Hsinchu County 30075, TaiwanSino-American Silicon Products Inc., No. 8. Industrial East Road 2, Hsinchu Science Park, Hsinchu County 30075, TaiwanWe perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.http://dx.doi.org/10.1155/2012/395235 |
| spellingShingle | Ying-Yang Teng Jyh-Chen Chen Chung-Wei Lu Cheng-Chuan Huang Wan-Ting Wun Hsueh-I Chen Chi-Yung Chen Wen-Chieh Lan Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process International Journal of Photoenergy |
| title | Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process |
| title_full | Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process |
| title_fullStr | Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process |
| title_full_unstemmed | Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process |
| title_short | Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process |
| title_sort | numerical simulation of the effect of heater position on the oxygen concentration in the cz silicon crystal growth process |
| url | http://dx.doi.org/10.1155/2012/395235 |
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