Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection
In this paper, buffer-free germanium–tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal–oxide–semiconductor processing conditions. The experimental results demonstrate that...
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2018-01-01
|
| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8481401/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1849708039878213632 |
|---|---|
| author | Cizhe Fang Yan Liu Yibo Wang Jibao Wu Genquan Han Yao Shao Jincheng Zhang Yue Hao |
| author_facet | Cizhe Fang Yan Liu Yibo Wang Jibao Wu Genquan Han Yao Shao Jincheng Zhang Yue Hao |
| author_sort | Cizhe Fang |
| collection | DOAJ |
| description | In this paper, buffer-free germanium–tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal–oxide–semiconductor processing conditions. The experimental results demonstrate that Ge<sub>0.928</sub>Sn<sub>0.072</sub> film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5% after post-thermal annealing at 600 °C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 A/W at 2 <italic>μ</italic>m. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics. |
| format | Article |
| id | doaj-art-e59948413b794fd89121cd7c5d0db94a |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2018-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-e59948413b794fd89121cd7c5d0db94a2025-08-20T03:15:47ZengIEEEIEEE Photonics Journal1943-06552018-01-011061910.1109/JPHOT.2018.28737348481401Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for PhotodetectionCizhe Fang0Yan Liu1Yibo Wang2Jibao Wu3Genquan Han4https://orcid.org/0000-0001-5140-4150Yao Shao5https://orcid.org/0000-0002-6117-3517Jincheng Zhang6https://orcid.org/0000-0001-7332-6704Yue Hao7Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaChina Electric Power Research Institute, Beijing, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaWide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an, ChinaIn this paper, buffer-free germanium–tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal–oxide–semiconductor processing conditions. The experimental results demonstrate that Ge<sub>0.928</sub>Sn<sub>0.072</sub> film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5% after post-thermal annealing at 600 °C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 A/W at 2 <italic>μ</italic>m. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics.https://ieeexplore.ieee.org/document/8481401/Buffer-free GeSnhigh relaxation degreephotodetection |
| spellingShingle | Cizhe Fang Yan Liu Yibo Wang Jibao Wu Genquan Han Yao Shao Jincheng Zhang Yue Hao Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection IEEE Photonics Journal Buffer-free GeSn high relaxation degree photodetection |
| title | Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection |
| title_full | Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection |
| title_fullStr | Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection |
| title_full_unstemmed | Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection |
| title_short | Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection |
| title_sort | buffer free gesn with high relaxation degree grown on si 001 substrate for photodetection |
| topic | Buffer-free GeSn high relaxation degree photodetection |
| url | https://ieeexplore.ieee.org/document/8481401/ |
| work_keys_str_mv | AT cizhefang bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT yanliu bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT yibowang bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT jibaowu bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT genquanhan bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT yaoshao bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT jinchengzhang bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection AT yuehao bufferfreegesnwithhighrelaxationdegreegrownonsi001substrateforphotodetection |