Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

Buffer-Free GeSn with High Relaxation Degree Grown on Si(001) Substrate for Photodetection

In this paper, buffer-free germanium–tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal–oxide–semiconductor processing conditions. The experimental results demonstrate that...

Full description

Saved in:
Bibliographic Details
Main Authors: Cizhe Fang, Yan Liu, Yibo Wang, Jibao Wu, Genquan Han, Yao Shao, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Photonics Journal
Subjects:
Buffer-free GeSn
high relaxation degree
photodetection
Online Access:https://ieeexplore.ieee.org/document/8481401/
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, buffer-free germanium&#x2013;tin (GeSn) films on Si(001) grown by molecular beam epitaxy are characterized. GeSn layers show high thermal stability under complementary metal&#x2013;oxide&#x2013;semiconductor processing conditions. The experimental results demonstrate that Ge<sub>0.928</sub>Sn<sub>0.072</sub> film retains high crystallinity with few misfit dislocations formed at a relaxation degree of 91.5&#x0025; after post-thermal annealing at 600 &#x00B0;C. Moreover, numerical simulations demonstrate that the proposed photodetector can achieve a high responsivity of 0.102 A&#x002F;W at 2 <italic>&#x03BC;</italic>m. This strategy can facilitate the fabrication of GeSn-based devices, which will contribute substantially to the development of group IV-based infrared optoelectronics.
ISSN:1943-0655

Similar Items