Study the compatibility between four detectors manufactured on one silicon chip
The tin oxide was deposited by using a vacuum thermal method on one silicon base to form four detectors , each of 0.25 cm2 in size and separated by 0.15mm. Differences in the properties of manufactured optical detectors were studied in the same method, conditions, and at the same time . The results...
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| Language: | English |
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Tikrit University
2020-03-01
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| Series: | Tikrit Journal of Pure Science |
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| Online Access: | https://tjpsj.org/index.php/tjps/article/view/252 |
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| author | Ahmed Ibrahim Farhan Wlla M. Mohammed |
| author_facet | Ahmed Ibrahim Farhan Wlla M. Mohammed |
| author_sort | Ahmed Ibrahim Farhan |
| collection | DOAJ |
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The tin oxide was deposited by using a vacuum thermal method on one silicon base to form four detectors , each of 0.25 cm2 in size and separated by 0.15mm. Differences in the properties of manufactured optical detectors were studied in the same method, conditions, and at the same time . The results indicated that the thickness of the films (200nm, 200nm, 170nm, 180nm). And the results haven't changed much when trying to grow another membrane. The results of the electrical properties showed a convergence in the voltage barriers (0.74, 0.75, 0.76, 0.77)V for thickness (200nm, 200nm, 170nm, 180nm) respectively, but the ideal factor between a large difference in one of the detectors (5.9, 6.1, 6, 3.5). The lighting current increases with the incident of the optical power. The results showed that the rise time of the thinnest thickness reached (0.096µs), which is the fastest among the detectors. While the thickest film has off time (8.2µs), it is the fastest time for relaxation among other detectors.
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| format | Article |
| id | doaj-art-e5485e069d6f497e9b6c7723d761c5c0 |
| institution | Kabale University |
| issn | 1813-1662 2415-1726 |
| language | English |
| publishDate | 2020-03-01 |
| publisher | Tikrit University |
| record_format | Article |
| series | Tikrit Journal of Pure Science |
| spelling | doaj-art-e5485e069d6f497e9b6c7723d761c5c02025-08-20T03:29:14ZengTikrit UniversityTikrit Journal of Pure Science1813-16622415-17262020-03-0125310.25130/tjps.v25i3.252Study the compatibility between four detectors manufactured on one silicon chipAhmed Ibrahim FarhanWlla M. Mohammed The tin oxide was deposited by using a vacuum thermal method on one silicon base to form four detectors , each of 0.25 cm2 in size and separated by 0.15mm. Differences in the properties of manufactured optical detectors were studied in the same method, conditions, and at the same time . The results indicated that the thickness of the films (200nm, 200nm, 170nm, 180nm). And the results haven't changed much when trying to grow another membrane. The results of the electrical properties showed a convergence in the voltage barriers (0.74, 0.75, 0.76, 0.77)V for thickness (200nm, 200nm, 170nm, 180nm) respectively, but the ideal factor between a large difference in one of the detectors (5.9, 6.1, 6, 3.5). The lighting current increases with the incident of the optical power. The results showed that the rise time of the thinnest thickness reached (0.096µs), which is the fastest among the detectors. While the thickest film has off time (8.2µs), it is the fastest time for relaxation among other detectors. https://tjpsj.org/index.php/tjps/article/view/252Quadrant detectorElectrical propertiesTin oxide |
| spellingShingle | Ahmed Ibrahim Farhan Wlla M. Mohammed Study the compatibility between four detectors manufactured on one silicon chip Tikrit Journal of Pure Science Quadrant detector Electrical properties Tin oxide |
| title | Study the compatibility between four detectors manufactured on one silicon chip |
| title_full | Study the compatibility between four detectors manufactured on one silicon chip |
| title_fullStr | Study the compatibility between four detectors manufactured on one silicon chip |
| title_full_unstemmed | Study the compatibility between four detectors manufactured on one silicon chip |
| title_short | Study the compatibility between four detectors manufactured on one silicon chip |
| title_sort | study the compatibility between four detectors manufactured on one silicon chip |
| topic | Quadrant detector Electrical properties Tin oxide |
| url | https://tjpsj.org/index.php/tjps/article/view/252 |
| work_keys_str_mv | AT ahmedibrahimfarhan studythecompatibilitybetweenfourdetectorsmanufacturedononesiliconchip AT wllammohammed studythecompatibilitybetweenfourdetectorsmanufacturedononesiliconchip |