Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics
With increasing awareness of environmental protection, the electrical performance and sintering process of lead-free piezoelectric ceramics are continuously optimized to replace lead-based materials. Exploring an appropriate doping strategy is believed to achieve concurrent improvements in lead-free...
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| Format: | Article |
| Language: | English |
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Tsinghua University Press
2025-04-01
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| Series: | Journal of Advanced Ceramics |
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| Online Access: | https://www.sciopen.com/article/10.26599/JAC.2025.9221054 |
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| author | Aihui Yang Yu Huan Qingying Wang Ting Wang Yuanhui Su Tao Wei |
| author_facet | Aihui Yang Yu Huan Qingying Wang Ting Wang Yuanhui Su Tao Wei |
| author_sort | Aihui Yang |
| collection | DOAJ |
| description | With increasing awareness of environmental protection, the electrical performance and sintering process of lead-free piezoelectric ceramics are continuously optimized to replace lead-based materials. Exploring an appropriate doping strategy is believed to achieve concurrent improvements in lead-free piezoelectric ceramics. In this work, SiC was selected to optimize the phase structure, defect configuration, and morphology of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCTZ) lead-free piezoelectric ceramics. On the one hand, SiC could promote the sintering process and grain growth due to its excellent thermal conductivity, resulting in the compactness and outstanding insulation of the doped ceramics. On the other hand, the incorporation of Si4+ in the B-site of the ABO3 lattice not only deforms the crystal structure and enhances the lattice distortion but also reduces the oxygen vacancy concentration and increases the charge carrier activation energy. As a result, excellent comprehensive piezoelectric responses of piezoelectric coefficient (d33) = 638 pC/N, inverse piezoelectric coefficient (d33*) = 1048 pm/V, planar electromechanical coupling coefficient (kp) = 58.21%, and Curie temperature (Tc) of ~95 °C were achieved with the optimized composition. Our work demonstrated that SiC-doped BCTZ-based ceramics are potential candidates for replacing lead-based piezoceramics. |
| format | Article |
| id | doaj-art-e52289142c11462d84861fa4c3ba0223 |
| institution | OA Journals |
| issn | 2226-4108 2227-8508 |
| language | English |
| publishDate | 2025-04-01 |
| publisher | Tsinghua University Press |
| record_format | Article |
| series | Journal of Advanced Ceramics |
| spelling | doaj-art-e52289142c11462d84861fa4c3ba02232025-08-20T02:20:08ZengTsinghua University PressJournal of Advanced Ceramics2226-41082227-85082025-04-01144922105410.26599/JAC.2025.9221054Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramicsAihui Yang0Yu Huan1Qingying Wang2Ting Wang3Yuanhui Su4Tao Wei5School of Material Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Material Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Material Science and Engineering, University of Jinan, Jinan 250022, ChinaGuangdong Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, ChinaSchool of Material Science and Engineering, University of Jinan, Jinan 250022, ChinaSchool of Material Science and Engineering, University of Jinan, Jinan 250022, ChinaWith increasing awareness of environmental protection, the electrical performance and sintering process of lead-free piezoelectric ceramics are continuously optimized to replace lead-based materials. Exploring an appropriate doping strategy is believed to achieve concurrent improvements in lead-free piezoelectric ceramics. In this work, SiC was selected to optimize the phase structure, defect configuration, and morphology of (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3 (BCTZ) lead-free piezoelectric ceramics. On the one hand, SiC could promote the sintering process and grain growth due to its excellent thermal conductivity, resulting in the compactness and outstanding insulation of the doped ceramics. On the other hand, the incorporation of Si4+ in the B-site of the ABO3 lattice not only deforms the crystal structure and enhances the lattice distortion but also reduces the oxygen vacancy concentration and increases the charge carrier activation energy. As a result, excellent comprehensive piezoelectric responses of piezoelectric coefficient (d33) = 638 pC/N, inverse piezoelectric coefficient (d33*) = 1048 pm/V, planar electromechanical coupling coefficient (kp) = 58.21%, and Curie temperature (Tc) of ~95 °C were achieved with the optimized composition. Our work demonstrated that SiC-doped BCTZ-based ceramics are potential candidates for replacing lead-based piezoceramics.https://www.sciopen.com/article/10.26599/JAC.2025.9221054(ba0.85ca0.15)(zr0.1ti0.9)o3 (bctz) piezoceramicssic dopingsintering temperaturecrystal structureexcellent piezoelectric properties |
| spellingShingle | Aihui Yang Yu Huan Qingying Wang Ting Wang Yuanhui Su Tao Wei Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics Journal of Advanced Ceramics (ba0.85ca0.15)(zr0.1ti0.9)o3 (bctz) piezoceramics sic doping sintering temperature crystal structure excellent piezoelectric properties |
| title | Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics |
| title_full | Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics |
| title_fullStr | Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics |
| title_full_unstemmed | Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics |
| title_short | Excellent comprehensive piezoelectric performances of SiC-doped BCTZ-based lead-free piezoelectric ceramics |
| title_sort | excellent comprehensive piezoelectric performances of sic doped bctz based lead free piezoelectric ceramics |
| topic | (ba0.85ca0.15)(zr0.1ti0.9)o3 (bctz) piezoceramics sic doping sintering temperature crystal structure excellent piezoelectric properties |
| url | https://www.sciopen.com/article/10.26599/JAC.2025.9221054 |
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