Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes
The mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (<italic>I–V</italic>) characteristics with the temperature ranging from 50 to 350...
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IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7543527/ |
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| author | Ting Zhi Tao Tao Bin Liu Zili Xie Peng Chen Rong Zhang |
| author_facet | Ting Zhi Tao Tao Bin Liu Zili Xie Peng Chen Rong Zhang |
| author_sort | Ting Zhi |
| collection | DOAJ |
| description | The mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (<italic>I–V</italic>) characteristics with the temperature ranging from 50 to 350 K. When the reverse bias <italic>V</italic> is below 12 V, the leakage current is dominated by the variable-range hopping conduction <inline-formula><tex-math notation="LaTeX">$(T\rm{ < 250\,K)}$</tex-math></inline-formula> and Poole–Frenkel emission <inline-formula><tex-math notation="LaTeX"> $(T\rm{ > 250\,K)}$</tex-math></inline-formula>, respectively. As the reverse bias increases <inline-formula> <tex-math notation="LaTeX">$(\vert V\vert \rm{ > 12\,V)}$</tex-math></inline-formula>, the space-charge-limited conduction mechanism is responsible for the leakage current. It is found that the leakage current is highly associated with the defects density, as well as the trapping capacity of deep level centers; therefore, the lower leakage current of blue LED is mainly attributed to higher thermal activation energy <inline-formula><tex-math notation="LaTeX"> $E_{a}$</tex-math></inline-formula> due to less deep level centers within GaN/InGaN MQWs structures. |
| format | Article |
| id | doaj-art-e51df46617d64a468e8dd2d090074ab2 |
| institution | DOAJ |
| issn | 1943-0655 |
| language | English |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-e51df46617d64a468e8dd2d090074ab22025-08-20T03:15:47ZengIEEEIEEE Photonics Journal1943-06552016-01-01851710.1109/JPHOT.2016.26000227543527Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting DiodesTing Zhi0Tao Tao1Bin Liu2Zili Xie3Peng Chen4Rong Zhang5Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaNanjing National Laboratory of Microstructures, Nanjing University, Nanjing, ChinaJiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing, ChinaNanjing National Laboratory of Microstructures, Nanjing University, Nanjing, ChinaThe mechanisms of reverse leakage in InGaN/GaN multiple-quantum-wells (MQWs) blue and green light-emitting diodes (LEDs) were studied through analyzing the current–voltage (<italic>I–V</italic>) characteristics with the temperature ranging from 50 to 350 K. When the reverse bias <italic>V</italic> is below 12 V, the leakage current is dominated by the variable-range hopping conduction <inline-formula><tex-math notation="LaTeX">$(T\rm{ < 250\,K)}$</tex-math></inline-formula> and Poole–Frenkel emission <inline-formula><tex-math notation="LaTeX"> $(T\rm{ > 250\,K)}$</tex-math></inline-formula>, respectively. As the reverse bias increases <inline-formula> <tex-math notation="LaTeX">$(\vert V\vert \rm{ > 12\,V)}$</tex-math></inline-formula>, the space-charge-limited conduction mechanism is responsible for the leakage current. It is found that the leakage current is highly associated with the defects density, as well as the trapping capacity of deep level centers; therefore, the lower leakage current of blue LED is mainly attributed to higher thermal activation energy <inline-formula><tex-math notation="LaTeX"> $E_{a}$</tex-math></inline-formula> due to less deep level centers within GaN/InGaN MQWs structures.https://ieeexplore.ieee.org/document/7543527/GaN-based light-emitting diodes (LEDs)multiple quantum wells (MQWs)(I–V) current-voltage characteristicsreverse leakage current |
| spellingShingle | Ting Zhi Tao Tao Bin Liu Zili Xie Peng Chen Rong Zhang Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes IEEE Photonics Journal GaN-based light-emitting diodes (LEDs) multiple quantum wells (MQWs) (I–V) current-voltage characteristics reverse leakage current |
| title | Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes |
| title_full | Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes |
| title_fullStr | Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes |
| title_full_unstemmed | Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes |
| title_short | Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes |
| title_sort | reverse leakage current characteristics of gan ingan multiple quantum wells blue and green light emitting diodes |
| topic | GaN-based light-emitting diodes (LEDs) multiple quantum wells (MQWs) (I–V) current-voltage characteristics reverse leakage current |
| url | https://ieeexplore.ieee.org/document/7543527/ |
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